A low temperature fabrication of Hf O2 films with supercritical C O2 fluid treatment

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Tsai, Chih Tsung ^a   Chang, Ting Chang ^b,e   Kin, Kon Tsu ^c   Liu, Po Tsun ^d   Yang, Po Yu ^d   Weng, Chi Feng ^b   Huang, Fon Shan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; OXIDE FILMS; SPUTTER DEPOSITION;

LOW TEMPERATURE FABRICATION; TERMINATING TRAPS;

HAFNIUM COMPOUNDS;

EID: 42149108024     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844496     Document Type: Article

References (22)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. E. P. Gusev, C. Cabral, Jr., M. Copel, C. D'Emic, and M. Gribelyuk, Microelectron. Eng. 69, 145 (2003).
3. C. H. Lee, S. H. Hur, Y. C. Shin, J. H. Choi, D. G. Park, and K. Kim, Appl. Phys. Lett. 86, 152908 (2005).
4. J. J. Lee, X. Wang, W. Bai, N. Lu, and D. L. Kwong, IEEE Trans. Electron Devices 50, 2067 (2003).
5. R. Ramprasad and N. Shi, Phys. Rev. B 72, 052107 (2005).
6. V. V. Afanas'ev, A. Stesmans, F. Chen, X. Shi, and S. A. Campbell, Appl. Phys. Lett. 81, 1053 (2002).
7. D. Han, J. Kang, C. Lin, and R. Han, Microelectron. Eng. 66, 643 (2003).
8. S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 2000 241.
9. C. Wiemer, S. Ferrari, M. Fanciulli, G. Pavia, and L. Lutterotti, Thin Solid Films 450, 134 (2004).
10. N. Sano, M. Sekiya, M. Hara, A. Kohno, and T. Sameshima, IEEE Electron Device Lett. 16, 157 (1995).
11. T. Sameshima and M. Satoh, Jpn. J. Appl. Phys., Part 2 36, L687 (1997).
12. P. T. Liu, T. C. Tasi, and P. Y. Yang, Appl. Phys. Lett. 90, 223101 (2007).
13. C. T. Tsai, T. C. Chang, P. T. Liu, P. Y. Yang, Y. C. Kuoand, K. T. Kin, P. L. Chang, and F. S. Huang, Appl. Phys. Lett. 91, 012109 (2007).
14. J. H. Hong, T. H. Moon, and J. M. Myoung, Microelectron. Eng. 75, 263 (2004).
15. P. T. Liu, C. T. Tsai, T. C. Chang, K. T. Kin, P. L. Chang, C. Chen, and Y. C. Chen, IEEE Trans. Nanotechnol. 6, 29 (2007).
16. B. Xie and A. J. Muscat, IEEE Trans. Semicond. Manuf. 17, 544 (2004).
17. J. Wut, L. F. Register, and E. Rosenbaumt, IEEE 37th Annual lntemational Reliability Physics Symposium, 1999 (unpublished), p. 389.
18. P. R. Emtage and W. Tantraporn, Phys. Rev. Lett. 8, 267 (1962).
19. S. W. Huang and J. G. Hwu, IEEE Trans. Electron Devices 50, 1658 (2003).
20. A. Koukab, A. Bath, and E. Losson, Solid-State Electron. 41, 635 (1997).
21. American Chemical Society (ACS) Symposium Series Vol. 329, edited by, S. Kim, K. P. Johnston, T. G. Squires, and, M. E. Paulaitis, (1987), p. 42.
22. J. R. Yeargan and H. L. Taylor, J. Appl. Phys. 39, 5600 (1968).