Chemical vapor deposition of HfO2 thin films using the novel single precursor hafnium 3-methyl-3-pentoxide, Hf(mp)4

Chemistry of Materials

Volumn 17, Issue 26, 2005, Pages 6713-6718

  Yang, Taek S ^a   An, Ki Seok ^a   Lee, Eun Joo ^a   Cho, Wontae ^a   Jang, Hong S ^a   Park, Sun K ^a   Lee, Young K ^a   Chung, Taek Mo ^a   Kim, Chang G ^a   Kim, Sungmoon ^b   Hwang, Jin Ha ^b   Lee, Choongkeun ^c   Lee, Nam Soo ^c   Kim, Yunsoo ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Hong Ik University   (South Korea)

^c Chungbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; GAS CHROMATOGRAPHY; HAFNIUM; MASS SPECTROMETRY; NUCLEAR MAGNETIC RESONANCE; ORGANIC COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS; THIN FILMS; VAPOR PRESSURE; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM 3-METHYL-3-PENTOXIDE; HAFNIUM OXIDE FILMS; HAFNIUM TERT-BUTOXIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 30744439300     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm050662t     Document Type: Article

References (38)

1. Muller, D. A.; Wilk, G. D. Appl. Phys. Lett. 2001, 79, 4195.
2. Wilk, G. D.; Wallace, R. M.; Anthony, J. M. J. Appl. Phys. 2001, 89, 5243.
3. Yamada, K. Extended Abstracts of 18th Conference on Solid State Devices and Materials, Tokyo, 1986; Business Center for Academic Societies Japan: Tokyo, 1986; p 257.
4. Hsu, C. T.; Su, Y. K.; Yokoyama, M. Jpn. J. Appl. Phys. 1992, 31, 2501.
5. Balog, M.; Schieber, M. Thin Solid Films 1977, 41, 247.
6. Hubbard, K. J.; Schlom, D. G. J. Mater. Res. 1996, 11, 2757.
7. Gutowski, M.; Jaffe, J. E.; Liu, C.-L.; Stoker, M.; Hegde, R. I.; Rai, R. S.; Tobin, P. J. Appl. Phys. Lett. 2002, 80, 1897.
8. Balog, M.; Schiever, M.; Michman, M. Patai, S. J. Electrochem. Soc. 1979, 126, 1203.
9. Balog, M.; Schiever, M.; Patai, S.; Michman, M. J. Cryst. Growth 1972, 17, 298.
10. Mazdiyasni, K. S.; Lynch, C. T. USAF Technol. Doc. Rep. 1963, No. ASD-TDR-63-322.
11. Sayan, S.; Aravamudhan, S.; Busch, B. W.; Schulte, W. H.; Cosandey, F.; Wilk, G. D.; Gustafsson, T.; Garfunkel, E. J. Vac. Sci. Technol. A 2002, 20, 507.
12. Choi, K.J.; Shin, W.-C.; Yoon, S.-G. J. Electrochem. Soc. 2002, 149, F18.
13. Choi, K.J.; Shin, W.-C.; Yoon, S.-G. J. Mater. Res. 2003, 18, 60.
14. Frank, M. M.; Sayan, S.; Dörmann, S.; Enge, T. J.; Wielunski, L. S. ; Garfunkel, E.; Chabal, Y. J. Mater. Sci. Eng. B 2004, 109, 6.
15. Williams, P. A.; Roberts, J. L.; Jones, A. C.; Chalker, P. R.; Tobin, N. L.; Bickley, J. F.; Davies, H. O.; Smith, L. M.; Leedham, T. J. Chem. Vap. Deposition 2002, 8, 163.
16. Song, M.-K.; Kang, S.-W.; Rhee, S.-W. Thin Solid Films 2004, 450, 272.
17. Abrutis, A.; Hubert-Pfalzgraf, L. G.; Pasko, S. V.; Bartasyte, A.; Weiss, F.; Janickis, V. J. Cryst. Growth 2004, 267, 529.
18. Baunemann, A.; Thomas, R.; Becker, R.; Winter, M.; Fischer, R. A.; Ehrhart, P.; Waser, R.; Devi, A. Chem. Commun. 2004, 1610.
19. Williams, P. A.; Roberts, J. L.; Jones, A. C.; Chalker, P. R.; Bickley, J. F.; Steiner, A.; Davies, H. O.; Leedham, T. J. J. Mater. Chem. 2002, 12, 165.
20. Gordon, R. G.; Becker, J.; Hausmann, D.; Suh, S. Chem. Mater. 2001, 13, 2463.
21. Ohshita, Y.; Ogura, A.; Hoshino, A.; Hiiro, S.; Machida, H. J. Cryst. Growth 2001, 233, 292.
22. Hausmann, D. M.; Kim, E.; Becker, J.; Gordon, R. G. Chem. Mater. 2002, 14, 4350.
23. Ohshita, Y.; Ogura, A.; Hoshino, A.; Hiiro, S.; Suzuki, T.; Machida, H. Thin Solid Films 2002, 406, 215.
24. Kukli, K.; Ritala, M.; Sajavaara, T.; Keinonen, J.; Leskelä, M. Chem. Vap. Deposition 2002, 8, 199.
25. Ogura, A.; Ito, K.; Ohshita, Y.; Ishikawa, M.; Machida, H. Thin Solid Films 2003, 441, 161.
26. Smith, R. C.; Ma, T.; Hoilien, N.; Tsung, L. Y.; Bevan, M. J.; Colombo, L.; Roberts, J.; Campbell, S. A.; Gladfelter, W. L. Adv. Mater. Opt. Electron. 2000, 10, 105.
27. Ritala, M.; Kukli, K.; Rahtu, A.; Räisänen, P. I.; Leskelä, M.; Sajavaara, T.; Keinonen, J. Science 2000, 288, 319.
28. Aarik, J.; Aidla, A.; Kiisler, A.-A.; Uustare, T.; Sammelselg, V. Thin Solid Films 1999, 340, 110.
29. Bradley, D. C. Chem. Rev. 1989, 89, 1317.
30. Sze, S. M. Physics of Semiconductor Devices, 2nd ed; John Wiley & Sons: New York, 1981; Chapter 7.
31. Auld, J.; Houlton, D. J.; Jones, A. C.; Rushworth, S. A.; Malik, M. A.; O'Brien, P.; Critchlow, G. W. J. Mater. Chem. 1994, 4, 1249.
32. Sung, M. M.; Kim, C. G.; Kim, J.; Kim, Y. Chem. Mater. 2002, 14, 826.
33. Koh, W.; Ku, S.-J.; Kim, Y. Chem. Vap. Deposition 1998, 4, 192.
34. Veith, M.; Altherr, A.; Wolfanger, H. Chem. Vap. Deposition 1999, 5, 87.
35. Bradley, D. C.; Faktor, M. M. Trans. Faraday Soc. 1959, 55, 2117.
36. Nandi, M.; Rhubright, D.; Sen, A. Inorg. Chem. 1990, 29, 3065.
37. Bhakta, R.; Thomas, R.; Hipler, F.; Bettinger, H. F.; Müller, J.; Ehrhart, P.; Devi, A. J. Mater. Chem. 2004, 14, 3231.
38. NIST Chemistry WebBook, http://webbook.nist.gov/Chemistry.