Impact of point defects on the luminescence properties of (Al,Ga)N

Materials Science Forum

Volumn 590, Issue , 2008, Pages 233-248

  Chichibu, Shigefusa F ^a,b   Uedono, Akira ^c   Onuma, Takeyoshi ^a,b   DenBaars, Steven P ^b,d   Mishra, Umesh K ^d   Speck, James S ^b,d   Nakamura, Shuji ^b,d  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

AlGaN; AlN; Emission efficiency; GaN; Luminescence; Nonradiative recombination; Point defect; Vacancy

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; AMMONIA; BINARY ALLOYS; EFFICIENCY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; QUANTUM EFFICIENCY; QUANTUM THEORY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; VACANCIES; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

ALGAN; EMISSION EFFICIENCIES; EXCITONIC PHOTOLUMINESCENCE; LUMINESCENCE QUANTUM EFFICIENCY; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION PROCESS; POSITRON ANNIHILATION MEASUREMENTS; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS;

EID: 62549158075     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.590.233     Document Type: Article

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