Optical properties of InGaN quantum wells

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 298-306

  Chichibu, S F ^a   Abare, A C ^a   Mack, M P ^a   Minsky, M S ^a   Deguchi, T ^b   Cohen, D ^a   Kozodoy, P ^a   Fleischer, S B ^a   Keller, S ^a   Speck, J S ^a   Bowers, J E ^a   Hu, E ^a   Mishra, U K ^a   Coldren, L A ^a   DenBaars, S P ^a   Wada, K ^c   Sota, T ^b   Nakamura, S ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b WASEDA UNIVERSITY   (Japan)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; ENERGY GAP; EXCITONS; OPTICAL PROPERTIES; PIEZOELECTRICITY; QUANTUM THEORY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

COULOMB SCREENING; EFFECTIVE BANDGAP INHOMOGENEITY; IN-PLANE CARRIER LOCALIZATION; INDIUM GALLIUM NITRIDE; QUANTUM CONFINED FRANZ-KELDYSH EFFECT; QUANTUM CONFINED STARK EFFECT; VALENCE BAND;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033528941     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00359-6     Document Type: Article

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