Optical properties of nitride quantum wells: How to separate fluctuations and polarization field effects

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 427-430

  Hangleiter, A ^a   Im, J S ^a   Off, J ^b   Scholz, F ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242973     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<427::AID-PSSB427>3.0.CO;2-K     Document Type: Article

References (8)

1. S. CHICHIBU, T. AZUHATA, T. SOTA, and S. NAKAMURA, Appl. Phys. Lett. 69, 4188 (1996).
2. Y. NARUKAWA, Y. KAWAKAMI, S. FUJITA, and S. NAKAMURA, Phys. Rev. B 55, R1938 (1997).
3. T. TAKEUCHI, S. SOTA, M. KATSURAGAWA, M. KOMORI, H. TAKEUCHI, H. AMANO, and I. AKASAKI, Jpn. J. Appl. Phys. 36, L382 (1997).
4. J.S. IM, H. KOLLMER, J. OFF, F. SCHOLZ, and A. HANGLEITER, Phys. Rev. B 57, R9435 (1998).
5. A. HANGLEITER, J.S. IM, H. KOLLMER, S. HEPPEL, J. OFF, and F. SCHOLZ, MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).
6. H. KOLLMER, J.S. IM, J. OFF, F. SCHOLZ, and A. HANGLEITER, Appl. Phys. Lett. 74, 82 (1999).
7. J.S. IM, S. HEPPEL, H. KOLLMER, A. SOHMER, J. OFF, F. SCHOLZ, and A. HANGLEITER, J. Cryst. Growth 189/190, 228 (1998).
8. J.S. IM, H. KOLLMER, J. OFF, A. SOHMER, F. SCHOLZ, and A. HANGLEITER, in: Nitride Semiconductors, Vol. 482, MRS Symp. Proc., Eds. F.A. PONCE, S.P. DENBAARS, B.K. MEYER, S. NAKAMURA, and S. STRITE, Mater. Res. Soc., Pittsburgh 1998 (pp. 513 to 518).