Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

Applied Physics Letters

Volumn 74, Issue 10, 1999, Pages 1460-1462

  Chichibu, S F ^a,d   Marchand, H ^a   Minsky, M S ^a   Keller, S ^a   Fini, P T ^a   Ibbetson, J P ^a   Fleischer, S B ^a   Speck, J S ^a   Bowers, J E ^a   Hu, E ^a   Mishra, U K ^a   DenBaars, S P ^a   Deguchi, T ^b   Sota, T ^b   Nakamura, S ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b WASEDA UNIVERSITY   (Japan)

^c NICHIA CORPORATION   (Japan)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000867356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123581     Document Type: Article

References (40)

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