MOVPE growth of high-quality AlN

Journal of Crystal Growth

Volumn 297, Issue 2, 2006, Pages 306-310

  Dadgar, A ^a,c   Krost, A ^a,c   Christen, J ^a   Bastek, B ^a   Bertram, F ^a   Krtschil, A ^a   Hempel, T ^a   Blasing J ^a   Haboeck, U ^b   Hoffmann, A ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c AZZURRO Semiconductors AG   (Germany)

Author keywords

A1. Stresses; A3. Metalorganic chemical vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL REACTORS; METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR GROWTH;

GRAPHITE SYSTEMS; LUMINESCENCE PEAKS; SAPPHIRE SUBSTRATES; SEMICONDUCTING III-V MATERIALS;

ALUMINUM NITRIDE;

EID: 33845594392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.046     Document Type: Article

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