Impact of strain on free-exciton resonance energies in wurtzite AlN

Journal of Applied Physics

Volumn 102, Issue 12, 2007, Pages

  Ikeda, Hirokatsu ^a   Okamura, Takahiro ^a   Matsukawa, Kodai ^a   Sota, Takayuki ^a   Sugawara, Mariko ^b   Hoshi, Takuya ^b   Cantu, Pablo ^c   Sharma, Rajat ^c   Kaeding, John F ^c   Keller, Stacia ^c   Mishra, Umesh K ^c   Kosaka, Kei ^d   Asai, Keiichiro ^d   Sumiya, Shigeaki ^d   Shibata, Tomohiko ^d,g   Tanaka, Mitsuhiro ^d   Speck, James S ^c,e   DenBaars, Steven P ^c,e   Nakamura, Shuji ^c,e   Koyama, Takahiro ^b,e,f   Onuma, Takeyoshi ^b,e,f   Chichibu, Shigefusa F ^b,e,f   more..

^a WASEDA UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c University of California   (United States)

^d NGK INSULATORS LTD   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g Dowa Semiconductor Akita Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EXCITONS; NATURAL FREQUENCIES; PERMITTIVITY; STRAIN MEASUREMENT; VALENCE BANDS;

EQUIBIAXIAL STRESS; FREE-EXCITONS; STRAIN DEPENDENCE; WURTZITE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 37549071523     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2825577     Document Type: Article

References (32)

1. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 0021-8979 10.1063/1.1661876 44, 292 (1973).
2. P. B. Perry and R. F. Rutz, Appl. Phys. Lett. 0003-6951 10.1063/1.90354 33, 319 (1978).
3. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 0028-0836 10.1038/nature04760 441, 325 (2006).
4. M. Suzuki and T. Uenoyama, Phys. Rev. B 0163-1829 10.1103/PhysRevB.52. 8132 52, 8132 (1995).
5. S. H. Wei and A. Zunger, Appl. Phys. Lett. 0003-6951 10.1063/1.117689 69, 2719 (1996).
6. S. K. Pugh, D. J. Dugdale, S. Brand, and R. Abram, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/14/1/003 14, 23 (1999).
7. K. Kim, W. R. L. Lambrecht, B. Segall, and M. van Schilfgaarde, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56.7363 56, 7363 (1997).
8. J. A. Majewski, M. Städele, and P. Vogl, MRS Internet J. Nitride Semicond. Res. 1, 30 (1996).
9. S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura, Appl. Phys. Lett. 0003-6951 10.1063/1.116000 68, 3766 (1996).
10. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 0021-8979 10.1063/1.364074 81, 417 (1997).
11. B. Gil, O. Briot, and R. L. Aulombard, Phys. Rev. B 0163-1829 10.1103/PhysRevB.52.R17028 52, R17028 (1995).
12. B. Gil, F. Hamdani, and H. Morko̧, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54.7678 54, 7678 (1996).
13. M. Tchounkeu, O. Briot, B. Gil, J. P. Alexis, and R. L. Aulombard, J. Appl. Phys. 0021-8979 10.1063/1.363475 80, 5352 (1996).
14. J. G. Tischler and J. A. Freitas, Jr., Appl. Phys. Lett. 0003-6951 10.1063/1.1787957 85, 1943 (2004).
15. W. J. Moore, J. A. Freitas, Jr., R. T. Holm, O. Kovalenkov, and V. Dmitriev, Appl. Phys. Lett. 0003-6951 10.1063/1.1899233 86, 141912 (2005).
16. K. M. Taylor and C. Lenie, J. Electrochem. Soc. 0013-4651 10.1149/1.2427686 107, 308 (1960).
17. I. Akasaki and M. Hashimoto, Solid State Commun. 0038-1098 10.1016/0038-1098(67)90313-4 5, 851 (1967).
18. S. H. Xie, B. K. Zhu, J. B. Li, X. Z. Wei, and Z. K. Xu, Polym. Test. 23, 797 (2004).
19. A. T. Collins, E. C. Lightowlers, and P. J. Dean, Phys. Rev. 0031-899X 10.1103/PhysRev.158.833 158, 833 (1967).
20. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effect in Semiconductors (Wiley, New York, 1974).
21. T. Koyama, M. Sugawara, T. Hoshi, A. Uedono, J. F. Kaeding, R. Sharma, S. Nakamura, and S. F. Chichibu, Appl. Phys. Lett. 0003-6951 10.1063/1.2748315 90, 241914 (2007).
22. J. H. Edgar, Properties of Group III Nitrides (Institution of Electrical Engineers, London, 1994).
23. T. Onuma, T. Koyama, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, T. Sota, A. Uedono, and S. F. Chichibu, Extended Abstracts of the 7th International Conference of Nitride Semiconductors, Las Vegas, NV, 2007 (unpublished).
24. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, P. Carrier, and S. H. Wei, Appl. Phys. Lett. 0003-6951 10.1063/1.1633965 83, 5163 (2003).
25. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 0021-8979 10.1063/1.1368156 89, 5815 (2001).
26. M. Leroux, S. Dalmasso, F. Natali, S. Helin, C. Touzi, S. Laügt, M. Passerel, F. Omnes, F. Semond, J. Massies, and P. Gibart, Phys. Status Solidi B 0370-1972 10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D 234, 887 (2002).
27. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 0003-6951 10.1063/1.1765208 84, 5264 (2004).
28. B. Monemar, P. P. Paskov, J. P. Bergman, A. A. Toropov, and T. V. Shubina, Phys. Status Solidi B 0370-1972 10.1002/pssb.200674836 244, 1759 (2007).
29. M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le Louarn, S. V́zian, and J. Massies, Superlattices Microstruct. 0749-6036 10.1016/j.spmi.2004.09.024 36, 659 (2004).
30. M. Leszczynski, T. Suski, P. Perlin, H. Teisseyre, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, and J. Major, J. Phys. D 0022-3727 10.1088/0022-3727/28/4A/029 28, A149 (1995).
31. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 0021-8979 10.1063/1.1661876 44, 292 (1973).
32. B. -T. Liou, S. -H. Yen, and Y. -K. Kuo, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-005-3236-y 81, 1459 (2005).