Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Chichibu, S F ^a,b,e   Uedono, A ^a,b,f   Onuma, T ^a,b   Sota, T ^c   Haskell, B A ^b,d   Denbaars, S P ^b,d   Speck, J S ^b,d   Nakamura, S ^b,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d University of California   (United States)

^e INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^f NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MONOENERGETIC POSITRON BEAMS; POSITRON DIFFUSION; POSITRON TRAPPING; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); DOPPLER EFFECT; FERMI LEVEL; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR LASERS;

GALLIUM NITRIDE;

EID: 19744383045     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851619     Document Type: Article

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