Properties of high-dielectric constant complex materials based on transition and rare-earth metal oxides

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 761-764

  Wong, Hei ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX MATERIALS; COMPLEX OXIDES; COMPLEX STRUCTURES; DIELECTRIC CONSTANTS; FOREIGN ATOMS; MATERIAL PROPERTIES; OXYNITRIDE; PSEUDO BINARIES; RARE EARTH METALS; RARE-EARTH METAL OXIDES;

ALUMINA; CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; GATE DIELECTRICS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; NITRIDES; PERMITTIVITY; RARE EARTH ELEMENTS; SILICA; SILICATES; SILICON OXIDES;

DIELECTRIC MATERIALS;

EID: 60649105390     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734655     Document Type: Conference Paper

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