Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Volumn , Issue , 2007, Pages 173-176

  Sen, Banani ^a   Yang, B L ^a   Wong, Hei ^a   Chu, P K ^a   Huang, A ^a   Kakushima, K ^b   Iwai, H ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Aluminium; Lanthanum oxide; Plasma immersion ion implantation; X ray photoelectron spectroscopy

Indexed keywords

ALUMINIUM INCORPORATION; LANTHANUM OXIDE; OXIDE TRAPS; PLASMA IMMERSION ION IMPLANTATION;

ION IMPLANTATION; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; PLASMA WAVES; TRACE ELEMENTS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 43049162422     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2007.4450090     Document Type: Conference Paper

References (12)

1. H. Wong and H. Iwai, "On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors", Microelectron. Eng. vol. 83, pp. 1867-1904, 2006.
2. D. Misra, H. Iwai and H. Wong, "High-k gate dielectrics", ECS Interface, vol. 14, pp. 30-34, 2005.
3. G.D. Wilk, R.M. Wallace, and J.M. Anthony, "High-k gate dielectrics: current status and materials properties considerations", J. Appl. Phys. vol. 89, pp. 5243-7275, 2001.
4. H. Wong and H. Iwai, "The road to miniaturization", Phys. World, vol. 18, pp. 40-44, 2005.
5. B. Sen, H. Wong, J. Molina, H. Iwai, J. A. Ng, K. Kakushima and C. K. Sarkar, "Electrical characteristics of high-k dielectric film grown by direct sputtering method", Solid-State Electron., vol. 51, pp.475-480, 2007.
6. P. F. Lee, J. Y. Dai, K. H. Wong, H. L. W. Chan and C. L. Choy, "Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 A", J. Appl. Phys. vol. 93, pp. 3665-3667, 2003.
7. 1-x on Si", Appl. Phys. Lett., Vol. 81, pp. 3618-3620 2002.
8. B. Sen, H. Wong, B. L. Yang, A. P. Huang, P. K. Chu, V. Filip and C. K. Sarkar, "Nitrogen iuncorporation into hafnium oxide films by plasma immersion ion implantation", Jap. J. App. Phys. vol. 46, pp. 3234-3238, 2007.
9. N. Kawada, M. Ito and Y. Saito, "Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates", Jap. J. Appl. Phys. vol. 45, pp. 9197-9199, 2006.
10. T. Shimizu, A. Kurokawa, K. Ishii and E. Suzuki, "MOCVD of high-dielectric-constant lanthanum oxide thin films", J. Electrochem Soc. vol. 150, PP.G429-G435, 2003.
11. L. Miotti, C. Driemeier, F. Tatsch, C. Radtke, V. Edon, M. C. Hugon, O. Voldoire, B. Agius, and I. J. R. Baumvol, "Atomic transport in LaAlO3 films on Si induced by thermal annealing", Electrochem. Solid-State Lett., vol. 9, pp. F49-F52, 2006.
12. x composite films", Jap. J. Appl. Phys. Vol. 44, pp. 2428-2432, 2005.