Effect of nitrogen on the electronic properties of hafnium oxynitrides

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Choi, J ^a   Puthenkovilakam, R ^a   Chang, J P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; HAFNIUM OXYNITRIDES; VALENCE BAND; VALENCY;

BAND STRUCTURE; COMPUTER SIMULATION; CONCENTRATION (PROCESS); ELECTRONIC STRUCTURE; NITROGEN; PROBABILITY DENSITY FUNCTION;

HAFNIUM COMPOUNDS;

EID: 33645227808     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177385     Document Type: Article

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