Effects of N 2 remote plasma nitridation on the structural and electrical characteristics of the HfO 2 gate dielectrics grown using remote plasma atomic layer deposition methods

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 900-907

  Choi, Jihoon ^a   Kim, Seokhoon ^a   Kim, Jinwoo ^a   Kang, Hyunseok ^a   Jeon, Hyeongtag ^a   Bae, Choelhwyi ^b,c  

^a Hanyang University   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; NITRIDATION; REMOTE PLASMA NITRIDATION (RPN);

ANNEALING; CURRENT DENSITY; DEPOSITION; LEAKAGE CURRENTS; NITROGEN; PLASMA APPLICATIONS; SILICON; SUBSTRATES; THERMODYNAMIC STABILITY; THIN FILMS;

HAFNIUM COMPOUNDS;

EID: 33745495575     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198865     Document Type: Article

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