Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Volumn , Issue , 2007, Pages 637-640

  Sen, Banani ^a   Yang, B L ^a   Wong, H ^a   Kok, C W ^a   Bera, M K ^a   Chu, P K ^a   Huang, A ^a   Kakushima, K ^b   Iwai, H ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

High k dielectric; Lanthanum oxide; Nitrogen; Plasma immersion ion implantation

Indexed keywords

ELECTRICAL STABILITY; NITROGEN ATOMS;

CAPACITANCE MEASUREMENT; ELECTRON BEAMS; ION IMPLANTATION; LANTHANUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 43049170079     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2007.4450205     Document Type: Conference Paper

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