Effects and mechanisms of nitrogen incorporation into hafnium oxide by plasma immersion implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1853-1858

  Wong, Hei ^a   Sen, Banani ^a   Yang, B L ^a   Huang, A P ^a   Chu, P K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); ION IMPLANTATION; NITROGEN; OXYGEN VACANCIES;

CAPACITANCE VOLTAGE CHARACTERISTICS; IMPLANTATION DOSE; OXIDE TRAP DENSITIES; PLASMA IMMERSION IMPLANTATION;

HAFNIUM COMPOUNDS;

EID: 37149004271     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2799969     Document Type: Article

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