Interface structure of ultrathin oxide prepared by N2O oxidation

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1941-1945

  Wong, Hei ^a   Poon, Vincent M C ^b   Kok, C W ^b   Chan, P J ^b   Gritsenko, V A ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Dielectric film; Interface states; MOS devices; Ultrathin oxide reliability

Indexed keywords

BONDING; DIELECTRIC FILMS; ELECTRON MOBILITY; INTERFACES (MATERIALS); MOS DEVICES; OXIDES; PERMITTIVITY MEASUREMENT; SEMICONDUCTOR DEVICE TESTING; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING STRUCTURE; INTERFACE STRUCTURE; SILICON-NITROGEN BONDING; ULTRATHIN OXIDE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0042411910     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815602     Document Type: Article

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