Growth and structural properties of crystalline LaAlO3 on Si (0 0 1)

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 36-38

  Reiner, J W ^a   Posadas, A ^a   Wang, M ^a   Ma, T P ^a   Ahn, C H ^a  

^a Yale University   (United States)

Author keywords

Epitaxial oxides; Gate dielectric

Indexed keywords

BUFFER LAYERS; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; GATE DIELECTRICS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;

ABRUPT INTERFACE; EPITAXIAL OXIDES; PEROVSKITE OXIDES; SILICON PLATFORMS;

LANTHANUM COMPOUNDS;

EID: 36148956554     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.004     Document Type: Article

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