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Volumn 43, Issue 1-2, 1999, Pages 103-106

Plasma processing damage in etching and deposition

(1)  Fonash, S J a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; MAGNETIC FLUX; MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING;

EID: 0032685931     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.431.0103     Document Type: Article
Times cited : (25)

References (14)
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  • 4
    • 0025536862 scopus 로고
    • Overview of Dry Etching Damage and Contamination Effects
    • S. J. Fonash, "Overview of Dry Etching Damage and Contamination Effects," J. Electrochem. Soc. 137, 3885 (1990).
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 3885
    • Fonash, S.J.1
  • 5
    • 0029323880 scopus 로고
    • Hydrogen and Processing Damage in CMOS Device Reliability: Defect Passivation and Depassivation during Plasma Exposures and Subsequent Annealing
    • O. O. Awadelkarim, S. J. Fonash, P. I. Mikulan, M. Ozaita, and Y. D. Chan, "Hydrogen and Processing Damage in CMOS Device Reliability: Defect Passivation and Depassivation During Plasma Exposures and Subsequent Annealing," Microelectron. Eng. 28, 477 (1995).
    • (1995) Microelectron. Eng. , vol.28 , pp. 477
    • Awadelkarim, O.O.1    Fonash, S.J.2    Mikulan, P.I.3    Ozaita, M.4    Chan, Y.D.5
  • 6
    • 0012722325 scopus 로고
    • Influence of Hydrogen and Oxygen Plasma Treatments on Grain-Boundary Defects in Poly-Si
    • N. H. Nickel, A. Yin, and S. J. Fonash, "Influence of Hydrogen and Oxygen Plasma Treatments on Grain-Boundary Defects in Poly-Si," Appl. Phys. Lett. 65, 3099 (1994).
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 3099
    • Nickel, N.H.1    Yin, A.2    Fonash, S.J.3
  • 7
    • 0004210719 scopus 로고    scopus 로고
    • Observation of a New Type of Plasma Etching Damage: Damage to N-Channel Transistors Arising from Inductive Metal Loops
    • A. Salah and O. O. Awadelkarim, "Observation of a New Type of Plasma Etching Damage: Damage to N-Channel Transistors Arising from Inductive Metal Loops," Appl. Phys. Lett. 68, 1690 (1996).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 1690
    • Salah, A.1    Awadelkarim, O.O.2
  • 8
    • 0031646677 scopus 로고    scopus 로고
    • Plasma Charging Damage on Ultrathin Gate Oxides
    • D. Park and Chenming Hu, "Plasma Charging Damage on Ultrathin Gate Oxides," Electron Device Lett. 19, 1 (1998).
    • (1998) Electron Device Lett. , vol.19 , pp. 1
    • Park, D.1    Hu, C.2
  • 9
    • 4243126071 scopus 로고    scopus 로고
    • 2/Si Interfaces in Submicron NMOS: Latent Defects and Passivation/Depassivation of Defects by Hydrogen
    • 2/Si Interfaces in Submicron NMOS: Latent Defects and Passivation/Depassivation of Defects by Hydrogen," J. Appl. Phys. 79, 517 (1996).
    • (1996) J. Appl. Phys. , vol.79 , pp. 517
    • Awadelkarim, O.O.1    Fonash, S.J.2    Mikulan, P.I.3    Chan, Y.D.4
  • 10
    • 0031258895 scopus 로고    scopus 로고
    • Cyclic Current-Voltage Characterization Applied to Edge Damage Evaluation in Gate Definition Plasma Etching
    • M. Okandan, S. J. Fonash, M. Ozaita, F. Preuninger, Y. D. Chan, and J. Werking, "Cyclic Current-Voltage Characterization Applied to Edge Damage Evaluation in Gate Definition Plasma Etching," Electron Device Lett. 18, 495 (1997).
    • (1997) Electron Device Lett. , vol.18 , pp. 495
    • Okandan, M.1    Fonash, S.J.2    Ozaita, M.3    Preuninger, F.4    Chan, Y.D.5    Werking, J.6
  • 14
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    • Quantum-Mechanical Modeling of Electron Tunneling Current from the Inversion Layer of Ultra-Thin-Oxide nMOSFETs
    • S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, "Quantum-Mechanical Modeling of Electron Tunneling Current from the Inversion Layer of Ultra-Thin-Oxide nMOSFETs," Electron Device Lett. 18, 209 (1997).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.