Study on self-aligned contact oxide etching using C5F 8/O2/Ar and C5F8/O 2/Ar/CH2F2 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 953-958

  Kim, Seung Bum ^a   Choi, Dong Goo ^a   Hong, Tea Eun ^a   Park, Tae Su ^a   Kim, Dong Sauk ^a   Song, Yong Wook ^a   Kim, Chang Il ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; DIFFUSION; ELECTRIC CONTACTS; MIXTURES; PLASMA SOURCES; SILICON; SILICON NITRIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

COMMERCIAL MEMORY DEVICES; CONTACT SURFACE; PLUG PAD;

PLASMA ETCHING;

EID: 31044447769     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1947797     Document Type: Conference Paper

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