Surface roughness variation during Si atomic layer etching by chlorine adsorption followed by an Ar neutral beam irradiation

Electrochemical and Solid-State Letters

Volumn 8, Issue 11, 2005, Pages

  Park, S D ^a   Oh, C K ^a   Lee, D H ^a   Yeom, G Y ^a,b  

^a Sungkyunkwan University   (South Korea)

^b National Program for Tera Level Devices   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHLORINE; ETCHING; PRESSURE EFFECTS; REMOVAL; SILICON COMPOUNDS;

ATOMIC LAYER ETCHING; LANGMUIR ISOTHERM; NEURAL BEAM IRRADIATION; SILICON CHLORIDE;

SURFACE ROUGHNESS;

EID: 27744478737     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2073667     Document Type: Article

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