Precise depth control of silicon etching using chlorine atomic layer etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 389-393

  Park, Sang Duk ^a   Min, Kyung Suk ^a   Yoon, Byoung Young ^a   Lee, Do Haing ^a   Yeom, Geun Young ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Ar+ ion beam; Atomic layer etching; Precise depth control; Silicon, chlorine

Indexed keywords

BINDING ENERGY; CHLORINE; ELECTRON CYCLOTRON RESONANCE; ETCHING; INDUCTIVELY COUPLED PLASMA; ION BEAMS; ION SOURCES; MONOLAYERS;

AR+ ION BEAM; ATOMIC LAYER ETCHING (ALE); PRECISE DEPTH CONTROL; SILICON SPUTTER ETCH RATE;

SILICON;

EID: 15544363395     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.389     Document Type: Article

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