Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1401-1410

  Kim, Jeong Ho ^a   Yu, Jae Seon ^a   Ku, Ja Chun ^a   Ryu, Choon Kun ^a   Oh, Su Jin ^a   Kim, Si Bum ^a   Kim, Jin Woong ^a   Hwang, Jeong Mo ^a   Lee, Su Youb ^b   Kouichiro, Inazawa ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b TEL Korea Ltd   (South Korea)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANTIREFLECTION COATINGS; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS; MOSFET DEVICES; NITROGEN OXIDES; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; ULSI CIRCUITS;

SELF-ALIGNED CONTACT (SAC) ETCHING; SILICON OXYNITRIDE;

PLASMA ETCHING;

EID: 0034225597     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582362     Document Type: Article

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