Evaluation of adamantane derivatives for chemically amplified resist - A comparison between ArF, EUV and EB exposures -

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Furukawa, Kikuo ^a   Seki, Shu ^b   Kozawa, Takahiro ^b   Tagawa, Seiichi ^b  

^a MITSUBISHI GAS CHEMICAL COMPANY INC   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Adamantane; ArF; Electron beam; EUV; Sensitivity

Indexed keywords

ELECTRON BEAMS; ELECTRON GUNS; PARTICLE BEAMS; PHOTOPOLYMERS; PHOTORESISTORS; PHOTORESISTS; POLYMERS;

ADAMANTANE; ADAMANTANE DERIVATIVES; ADAMANTYL METHACRYLATES; ARF; ARF EXPOSURE TOOLS; AS MODELS; CHEMICAL STRUCTURES; CHEMICALLY AMPLIFIED RESISTS; EB RADIATIONS; EUV; EXPOSURE SOURCES; EXTREME ULTRAVIOLETS; OPTICAL SOURCES; PERFORMANCE CHARACTERISTICS; SENSITIVITY;

ULTRAVIOLET DEVICES;

EID: 57349126241     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772408     Document Type: Conference Paper

References (37)

1. H. Ito and C. G. Willson, Polym. Eng. Sci., 23, (1983) 1012
2. J. -H. Kim, Y. -H. Kim, S. M. Chon, T. Nagai, M. Noda, Y. Yamaguchi, Y. Makita, and H. Nemoto, J. Photopolym. Sci. Technol., 17, (2004) 379
3. K. Nozaki, J. Kon, and E. Yano, J. Photopolym. Sci. Technol., 13, (2000) 397
4. P. R. Varanasi, R. D. Allen, H. Ito, T. Wallow, H. Trung, R. Chen, P. Lawson, W. Lim B. Brunsvold, G. Jordhamo, R. Kwong, T. Kajita, Y. Nishimura, M. Slezak, W. Peterson, and M. Koshiba, J. Photopolym. Sci. Technol., 14, (2001) 385
5. R. R. Dammel, G. Pawlowski, A. Romano, F. M. Houlihan, W. Kim, R. Sakamuri, D. Abdallah, M. Padmanaban, M. D. Rahman, andD. McKenzie, J. Photopolym. Sci. Technol., 18, (2005) 593
6. K. Maeda, K. Nakano, and M. Shirai, J Photopolym. Sci. Technol., 19, (2006) 699
7. J. Hatakeyama, T. Takeda, M. Nakashima, T. Kinsho, Y. Kawai, and T. Ishihara, J. Photopolym. Sci. Technol., 17, (2004) 519
8. H. Ito, H. Trung, S. D. Bums, D. Pfeiffer, and D. R. Medeiros, J Photopolym. Sci. Technol., 19, (2006) 305
9. A. Otake, E. Araya, H. Momose, R. Ansai, M. Tooyama, and T. Fujiwara, J. Photopolym. Sci. Technol., 17, (2004) 475
10. T. Ogata, S. Matsumaru, H. Shimizu, N. Kubota, and H. Hada, J Photopolym. Sci. Technol., 17, (2004) 483
11. K. Dean and D. Stark, J Photopolym. Sci. Technol., 19, (2006) 487
12. D. C. Brandt, I. V. Fomenkov, A. I. Ershov, W. N. Partio, D. W. Myers, N. R. Bowering, A. N. Bykanov, G. O. Vaschenko, O. V Khodykin, J. R. Hoffman, E. L. Vargas, J. A. Chavez, R. D. Simmons, C. P. Chrobak, and A. Hsu, 2007 International Extreme Ultraviolet Lithography Symposium, (2007) SO-06
13. T. Hirayama, D. Shiono, H. Hada, J. Onodera, and M. Ueda, J. Photopolym. Sci. Technol., 17, (2004) 434
14. K. Kojima, S. Mori, D. Shiono, H. Hada, and J. Onodera, J Photopolym. Sci. Technol., 20, (2007) 429
15. D. Shimizu, K. Maruyama, A. Saito, T. Kai, T. Shimokawa, K. Fujiwara, Y. Kikuchi, and I. Nishiyama, J. Photopolym. Sci. Technol., 20, (2007) 423
16. Y. Fukushima, T. Watanabe, R. Ohnishi, H. Kinoshita, H. Shiotani, S. Suzuki, M. Hayakawa, Y Endo, T. Yamanaka, and S. Yusa, J Photopolym. Sci. Technol., 20, (2007) 419
17. K. Ushida, SEMI Technology Symposium, Session 3, (2002) 3-13
18. I. Takemoto, N, Ando, K. Edamatsu, Y Fuji, K. Hashimoto, J. Funase, and H. Yokoyama, J. Photopolym. Sci. Technol., 20, (2007) 473
19. rd International Symposium on Immersion Lithography, (2006) 53
20. T. Furukawa, K. Hieda, Y Wang, T. Miyamatsu, K. Yamada, T. Tominaga, Y. Makita, H. Nakagawa, A. Nakamura, M. Shima, and T. Shimokawa, J. Photopolym. Sci. Technol., 19, (2006) 641
21. rd International Symposium on Immersion Lithography, (2006) 62
22. P. Zimmerman, C. Peski, B. Rice, J. Byers, N. J. Turro, X. Lei, J. L. Gejo, V. Liberman, S. Palmacci, M. Rothshild, A. Whittaker, I. Blaley, L. Chen, B. Dargaville, and H. Liu, J. Photopolym. Sci. Technol., 20, (2007) 643
23. rd International Symposium on Immersion Lithography, (2006) 42
24. rd International Symposium on Immersion Lithography, (2006) 43
25. rd International Symposium on Immersion Lithography, (2006) 26
26. R. Hanawa, K. Hashimoto, and Y Uetani, J. Photopolym. Sci. Technol., 15, (2002) 619
27. M. J. May, S. Derrough, A. Bazin, B. Mortini, C. Brouchon, and G. Hadziioannou, J. Photopolym. Sci. Technol., 20, (2007) 345
28. T. Hattori, Y Yokoyama, K. Kimura, R. Yamanaka, T. Tanaka, and H. Fukuda, J. Photopolym. Sci. Technol., 16, (2003) 489
29. H. Yamamoto, T. Kozawa, A. Saeki, K. Okamoto, S. Tagawa, K. Ohmori, M. Sato, and H. Komano, Jpn. J. Appl. Phys., 46, (2007) 6187
30. T. Kozawa, S. Tagawa, and M. Shell, Jpn. J Appl. Phy., 46, (2007) L1143
31. R. Hirose, T. Kozawa, S. Tagawa, T. Kai, and T. Shimokawa, Jpn. J Appl. Phys., 46, (2007) L979
32. T. Kozawa, T. Shigaki, K. Okamoto, A. Saeki, S. Tagawa, T. Kai and T. Shimokawa, J Vac. Sci. Technol., B 24, (2006) 3055
33. T. Kozawa, S. Tagawa, H. B. Cao, H. Deng, and M. J. Leeson, J. Vac. Sci. Technol., B 25, (2007) 2481
34. G. P. Watson, D. Fu, S. D. Berger, D. Tennant, L. Fetter, A. Novembre, and C. Biddick, J Vac. Sci. Technol., B 14, (1996) 4277
35. N. Matsuzawa, H. Oizumi, S. Mori, S. Irie, S. Shirayone, E. Yano, S. Okazaki, A. Ishitani, and D. A. Dixon: Jpn. J. Appl. Phys., 38, (1999) 7109
36. Calculated with ESTAR program provided by National Institute of Standards and Technology.
37. H. Yamamoto, T. Kozawa, S. Tagawa, H. B. Cao, H. Deng, and M. J. Leeson, Jpn. J Appl. Phys., 46, (2007) L142