High etch-resistant EB resists employing adamantyl protective groups and their application for 248-nm lithography

Journal of Photopolymer Science and Technology

Volumn 13, Issue 3, 2000, Pages 397-403

  Nozaki, Koji ^a   Kon, Jun Ichi ^a   Yano, Ei ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

248 nm lithography; Adamantyl groups; Alicyclic methacrylate; EB resist

Indexed keywords

ACRYLIC ACID METHYL ESTER; ADAMANTANE DERIVATIVE;

ARTICLE; CHEMICAL REACTION; ELECTRON BEAM; PROCESS TECHNOLOGY; RADIATION PROTECTION; REACTION ANALYSIS; THICKNESS; X RAY FILM;

EID: 0034583946     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.13.397     Document Type: Article

References (15)