Bilayer resists for 193 nm lithography: SSQ and POSS

Journal of Photopolymer Science and Technology

Volumn 19, Issue 3, 2006, Pages 305-311

  Ito, Hiroshi ^a   Truong, Hoa D ^a   Burns, Sean D ^b   Pfeiffer, Dirk ^b   Medeiros, David R ^b  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

193 nm lithography; Bilayer resists; Chemical amplification; Condensation; Deprotection; Fluoroalcohol; Hydrogen bonding; Molecular glass resists; Polysilsesquioxane; POSS

Indexed keywords

EID: 33747389781     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.19.305     Document Type: Article

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