All-analytic surface potential model for SOI MOSFETs

IEE Proceedings: Circuits, Devices and Systems

Volumn 152, Issue 2, 2005, Pages 183-188

  Yu, Y S ^a   Kim, S H ^a   Hwang, S W ^b,c   Ahn, D ^c  

^a Hankyong National University   (South Korea)

^b Korea University   (South Korea)

^c University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; FULLY DEPLETED (FD); PARTIALLY DEPLETED (PD); SURFACE POTENTIAL;

CAPACITANCE; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MATRIX ALGEBRA; NUMERICAL ANALYSIS; POISSON EQUATION; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 20444432336     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20041110     Document Type: Conference Paper

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