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Volumn 44, Issue 3, 2000, Pages 409-418

Explicit surface-potential-based MOSFET model for circuit simulation

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC DISTORTION; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; TRANSCONDUCTANCE;

EID: 0034159715     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00219-1     Document Type: Article
Times cited : (127)

References (22)
  • 1
    • 85031580795 scopus 로고
    • Unclassified report NL-UR 003/94: MOS model 9. Eindhoven: Philips Electronics
    • Velghe RMDA, Klaassen DBM, Klaassen FM. Unclassified report NL-UR 003/94: MOS model 9. Eindhoven: Philips Electronics, 1994.
    • (1994)
    • Velghe, R.M.D.A.1    Klaassen, D.B.M.2    Klaassen, F.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.