Rigorous surface-potential solution for undoped symmetric double-gate MOSFETs considering both electrons and holes at quasi nonequilibrium

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 616-623

  Zhou, Xing ^a   Zhu, Zhaomin ^a,b   Rustagi, Subhash C ^b   See, Guan Huei ^a   Zhu, Guojun ^a   Lin, Shihuan ^a   Wei, Chengqing ^a   Lim, Guan Hui ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Imref; MOSFET; Nonequilibrium; Poisson solution; Surface potential; Symmetric double gate

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRONS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NEWTON-RAPHSON METHOD; POISSON EQUATION; SEMICONDUCTING SILICON; SURFACE POTENTIAL;

DOUBLE-GATE MOSFET; SECOND-ORDER NEWTON-RAPHSON TECHNIQUE;

MOSFET DEVICES;

EID: 39749186785     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912999     Document Type: Article

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