A continuous compact MOSFET model for fully- and partially-depleted SOI devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 821-825

  Sleight, J W ^a   Rios, R ^b  

^a Technology Development Group   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT MOSFET MODELS; DEVICE OPERATIONS; FULLY DEPLETED; PARTIALLY DEPLETED; PARTIALLY-DEPLETED SOI; SOI-MOSFETS;

FINITE DIFFERENCE METHOD; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 84888628829     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662786     Document Type: Article

References (11)

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