Compact modeling of doped symmetric DG MOSFETs with regional approach

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 792-795

  Chandrasekaran, Karthik ^a   Zhu, Zhaomin ^a   Zhou, Xing ^a   Shangguan, Wangzuo ^a   See, Guan Huei ^a   Chiah, Siau Ben ^a   Rustagi, Subhash C ^b   Singh, Navab ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Compact modeling; Regional surface mid gap potential; Symmetric double gate MOSFET; Ultra thin body; Volume inversion

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ELECTRIC CHARGE; MATHEMATICAL MODELS; POISSON EQUATION; SILICON; THRESHOLD VOLTAGE;

COMPACT MODELING; REGIONAL SURFACE/MID-GAP POTENTIAL; SYMMETRIC DOUBLE GATE MOSFET; ULTRA THIN BODY; VOLUME INVERSION;

MOSFET DEVICES;

EID: 33845218257     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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