Explicit continuous model for long-channel undoped surrounding gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1868-1873

  Iñíguez, Benjamin ^a   Jiménez, David ^b   Roig, Jaume ^c   Hamid, Hamdy A ^a   Marsal, Lluís F ^a   Pallarès, Josep ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Charge control model; Compact device modeling; Surrounding gate (SGT) MOSFETs

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS;

CHARGE CONTROL MODEL; COMPACT DEVICE MODELING; SURROUNDING GATE MOSFETS;

MOSFET DEVICES;

EID: 23344447576     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852892     Document Type: Article

References (8)

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