Interface structure of epitaxial graphene grown on 4H-SiC(0001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 20, 2008, Pages

  Hass, J ^a   Millan Otoya J E ^a   First, P N ^a   Conrad, E H ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 57149122586     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.205424     Document Type: Article

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