An STM observation of the initial process of graphitization at the 6H-SiC(0001) surface

Surface Review and Letters

Volumn 10, Issue 2-3, 2003, Pages 473-477

  Naitoh, M ^a   Kitada, M ^a   Nishigaki, S ^a   Toyama, N ^a   Shoji, F ^b  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b KYUSHU KYORITSU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHITIZATION; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; THERMAL EFFECTS;

GRAPHITE DOMAINS;

SURFACE STRUCTURE;

GRAPHITE; SILICON CARBIDE;

CHEMICAL MODIFICATION; CONFERENCE PAPER; ELECTRON DIFFRACTION; HEATING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0042415653     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x03005165     Document Type: Conference Paper

References (8)

1. M. Kusunoki, T. Suzuki, T. Hirayama, N. Shibata and K. Kaneko, Appl. Phys. Lett. 77, 531 (2000).
2. I. Forbeaux, J.-M. Thenlin and J.-M. Debever, Surf. Sci. 442, 9 (1999).
3. H. E. Hoster, M. A Kulakov and B. Bullemer, Surf. Sci. 382, L658 (1997).
4. H. Sasaki, T. Jikimoto, A. Kinoshita, M. Hirai, M. Kusaka, M. Iwami and T. Nakata, Jpn. J. Appl. Phys. 38, 309 (1999).
5. M. Naitoh, J. Takami, S. Nishigaki and N. Toyama, Appl. Phys. Lett. 75, 650 (1999).
6. J. Takami, M. Naitoh, S. Nishigaki and N. Toyama, Surf. Sci. 482-485, 359 (2001).
7. A. Seubert, J. Bernhardt, M. Nerding, U. Starke and K. Heinz, Surf. Sci. 454-456, 45 (2000).
8. Y. Hisada, K. Hayashi, K. Kato, T. Aoyama, S. Mukainakano and I. Ichimiya, Jpn. J. Appl. Phys. 40, 2211 (2001).