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Volumn 371, Issue 2-3, 1997, Pages 316-320
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Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface
a
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Author keywords
Auger electron spectroscopy; Electron energy loss spectroscopy; Low energy electron diffraction (LEED); Scanning tunneling microscopy; Silicon carbide; Single crystal surfaces; Surface structure, morphology, roughness and topography
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
ELECTRON ENERGY LOSS SPECTROSCOPY;
GRAPHITE;
LOW ENERGY ELECTRON DIFFRACTION;
MORPHOLOGY;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
SILICON CARBIDE;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
THERMAL EFFECTS;
VACUUM;
MOIRE PATTERN;
SURFACE TOPOGRAPHY;
ULTRA HIGH VACUUM (UHV);
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0031079148
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(96)01008-4 Document Type: Article |
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Times cited : (56)
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References (14)
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