Structure refinement of the silicon carbide polytypes 4H and 6H: Unambiguous determination of the refinement parameters

Acta Crystallographica Section A: Foundations of Crystallography

Volumn 57, Issue 1, 2001, Pages 60-67

  Bauer, A ^a   Reischauer, Ph ^a   Krausslich J ^a   Schell, N ^b   Matz, W ^b   Goetz, K ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

ARTICLE; ATOM; CALCULATION; CHEMICAL BOND; CHEMICAL STRUCTURE; MODEL; MOLECULAR DYNAMICS; PARAMETER; STRUCTURE ANALYSIS; X RAY DIFFRACTION;

EID: 0035141234     PISSN: 01087673     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0108767300012915     Document Type: Article

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