A core level and valence band photoemission study of 6H-SiC(0001)

Surface Science

Volumn 405, Issue 2-3, 1998, Pages 288-297

  Johansson, L I ^a   Glans, P A ^a   Hellgren, N ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Low index single crystal surfaces; Photoelectron emission; Photoelectron spectroscopy; Semiconducting surfaces; Silicon carbide; Single crystal surfaces; Soft X ray photoelectron spectroscopy

Indexed keywords

ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE TREATMENT;

PHOTOELECTRON EMISSION; SEMICONDUCTING SURFACE; SURFACE RECONSTRUCTION;

PHOTOELECTRON SPECTROSCOPY;

EID: 0032073237     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00086-7     Document Type: Article

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