Orientation dependence of homoepitaxy: An in situ X-ray scattering study of Ag

Physica B: Condensed Matter

Volumn 221, Issue 1-4, 1996, Pages 65-69

  Elliott, W C ^a   Miceli, P F ^a   Tse, T ^b   Stephens, P W ^b  

^a UNIVERSITY OF MISSOURI   (United States)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; SILVER; SURFACE ROUGHNESS; X RAY ANALYSIS;

SPECULAR X RAY REFLECTIVITY;

EPITAXIAL GROWTH;

EID: 0030563085     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00906-X     Document Type: Article

References (27)

1. F. Family, Physica A 168 (1990) 561.
2. J. Villain, J. Phys. I (France) 1 (1991) 19.
3. P. Meakin, Phys. Rep. 235 (1993) 189.
4. J. Krug and H. Spohn, in: Solids far from Equilibrium, ed. C. Godrèche (Cambridge University Press, Cambridge, 1992).
5. R. Chiarello, V. Panella and J. Krim, Phys. Rev. Lett. 67 (1991) 3408.
6. J. Chevrier, V. Le Thanh, R. Buys and J. Derrien, Europhys. Lett. 16 (1991) 737.
7. Y.-L. He, H.-N. Yang, T.-M. Lu and G.-C. Wang, Phys. Rev. Lett. 69 (1992) 3770.
8. J. Krim, I. Heyvaert, C. Van Haesendonck and Y. Bruynseraede, Phys. Rev. Lett. 70 (1993) 57.
9. H. You, R.P. Chiarello, H.K. Kim and K.G. Vandervoort, Phys. Rev. Lett. 70 (1993) 2900.
10. H.-J. Ernst, F. Fabre, R. Folkerts and J. Lapujoulade, Phys. Rev. Lett. 72 (1994) 112.
11. C. Thompson, G. Palasantzas, Y.P. Feng, S.K. Sinha and J. Krim, Phys. Rev. B 49 (1994) 4902.
12. G. Palasantzas and J. Krim, Phys. Rev. Lett. 73 (1994) 3564.
13. W.M. Tong, R.S. Williams, A. Yanase, Y. Segawa and M.S. Andersen, Phys. Rev. Lett. 72 (1994) 3374.
14. M.D. Johnson, C. Orme, A.W. Hunt, D. Graff, J. Sudijono, L.M. Sander and B.G. Orr, Phys. Rev. Lett. 72 (1994) 116.
15. Y.-N. Yang, G.-C. Wang and T.-M. Lu, Phys. Rev. Lett. 73 (1994) 2348.
16. J.A. Stroscio, D.T. Pierce, M. Stiles and A. Zangwill, Phys. Rev. Lett. 75 (1995) 4246.
17. W.F. Egelhoff Jr. and I. Jacob, Phys. Rev. Lett. 62 (1989) 921.
18. H.A. van der Vegt, H.M. van Pinxteren, M. Lohmeier, E. Vlieg and J.M.C. Thornton, Phys. Rev. Lett. 68 (1992) 3335.
19. J. Vrijmoeth, H.A. van der Vegt, J.A. Meyer, E. Vlieg and R.J. Behm, Phys. Rev. Lett. 72 (1994) 3843.
20. G. Rosenfeld, R. Servaty, C. Teichert, B. Poelsema and G. Comsa, Phys. Rev. Lett. 71 (1993) 895.
21. P.W. Stephens, P.J. Eng and T. Tse, Rev. Sci. Instr. 64 (1993) 374.
22. P.F. Miceli, in: Semiconductor Interfaces, Microstructures and Devices: Properties and Applications, ed. Z.C. Feng (IOP Publishing, Bristol, 1993) p. 87.
23. I.K. Robinson, Phys. Rev. B 33 (1986) 3830.
24. S.K. Sinha, E.B. Sirota, S. Garoff and H.B. Stanley, Phys. Rev. B 38 (1988) 2297.
25. J.A. Stroscio, D.T. Pierce and R.A. Dragoset, Phys. Rev. Lett. 70 (1993) 3615.
26. W.C. Elliott, P.F. Miceli, T. Tse and P.W. Stephens, to be published.
27. Z. Zhang, J. Detch and H. Metiu, Phys. Rev. B 48 (1993) 4972.