Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 76-84

  Hartmann, J M ^a   Andrieu, F ^a   Lafond, D ^a   Ernst, T ^a   Bogumilowicz, Y ^a   Delaye, V ^a   Weber, O ^a   Rouchon, D ^a   Papon, A M ^a   Cherkashin, N ^b  

^a CEA LETI   (France)

^b CEMES CNRS   (France)

Author keywords

Nanoelectronics; Reduced Pressure Chemical Vapour Deposition; Si SiGe heterostructures

Indexed keywords

CHLORINE COMPOUNDS; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; HOLE MOBILITY; INFRARED DEVICES; MOS DEVICES; MOSFET DEVICES; MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; OXIDE SEMICONDUCTORS; SI-GE ALLOYS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; TENSILE STRAIN;

GASEOUS PRECURSORS; GE CONCENTRATIONS; HIGHEST TEMPERATURE; LOWS-TEMPERATURES; REDUCED PRESSURE-CHEMICAL VAPOUR DEPOSITION; SELECTIVE EPITAXIAL GROWTH; SELECTIVE-EPITAXIAL GROWTH; SI AND SIGE GROWTH KINETICS; SI/SIGE HETEROSTRUCTURES; SIGE VIRTUAL SUBSTRATES;

METALS;

EID: 56949106082     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.08.009     Document Type: Article

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