Selective chemical vapour etching of Si1-xGex versus Si with gaseous HCl

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1668-1674

  Bogumilowicz, Y ^a   Hartmann, J M ^b   Fabri, J M ^b   Billon, T ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; HYDROCHLORIC ACID; SENSITIVITY ANALYSIS;

EPITAXIAL LAYERS; ETCHING KINETICS; GASEOUS HYDROCHLORIC ACID;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33846893891     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/028     Document Type: Article

References (17)

1. Bogumilowicz Y, Hartmann J M, Truche R, Campidelli Y, Rolland G and Billon T 2005 Semicond. Sci. Technol. 274 28
2. Loo R, Caymax M, Meunier-Beillard P, Peytier I, Holsteyns F, Kubicek S, Verheyen P, Lindsay R and Richard O 2004 Appl. Surf. Sci. 224 63
3. Ueno T, Rhee H S, Lee S H, Lee H, Shin D S, Jin Y-S, Maeda S and Lee N-I 2005 Symp. on VLSI Tech., Dig. of Tech. Papers (Kyoto, Japan, June 2005) p 24
4. Loo R, Verheyen P, Eneman G, Rooyackesr R, Leys F, Shamiryan D, De Meyer K, Absil P P and Caymax M 2006 Thin Solid Films 508 226
5. Delhougne R, Eneman G, Caymax M, Loo R, Meunier-Beillard P, Verheyen P, Vandervorst W, De Meyer K and Heyns M 2004 Solid-State Electron. 48 1307
6. Watts J S and Neudeck G 1996 J. Vac. Sci. Technol. B 14 1670
7. Monfray S et al 2004 Solid State Electron. 48 887
8. Borel S, Arvet C, Bilde J, Harrison S and Louis D 2004 Microelectron. Eng. 73 301
9. Borel S, Caubet V, Bilde J, Cherif A, Arvet C, Vizioz C, Hartmann J M, Rabillé G and Billon T 2006 Proc. of the E13 Symp. of the 210th ECS Fall Meeting (Cancun, Mexico, 29 Oct.-3 Nov. 2006) at press
10. Caubet V, Borel S, Arvet C, Bilde J, Chanemougame D, Monfray S, Ranica R, Mazoyer P and Skotnicki T 2005 Japan. J. Appl. Phys. 44 5795
11. Hartmann J M, Bogumilowicz Y, Andrieu F, Holliger P, Rolland G and Billon T 2005 J. Cryst. Growth 277 114
12. Hartmann J M, Abbadie A, Vinet M, Clavelier L, Holliger P, Lafond D, Séméria M N and Gentile P 2003 J. Cryst. Growth 257 19
13. Loo R and Caymax M 2004 Appl. Surf. Sci. 224 24
14. Kreuzer S, Bensch F, Merkel R and Vogg G 2005 Mater. Sci. Semicond. Process. 8 143
15. Tuppen C G and Gibbins C J 1990 J. Appl. Phys. 68 1526
16. Lee S-Y, Kim S-M, Yoon E-J, Oh C W, Chung I, Park D and Kim K 2004 IEEE Electron. Dev. Lett. 25 217
17. Ernst T et al 2006 Proc. of the 2006 IEDM Conf. (San Francisco, USA, December 2006) at press