Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: II. Strain and defects

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 362-368

  Hartmann, J M ^a   Abbadie, A ^b   Rouchon, D ^a   Mermoux, M ^c   Billon, T ^a  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c LEPMI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DEFECTS; RAMAN SPECTROSCOPY; SUBSTRATES; TENSILE STRAIN;

PSEUDOMORPHIC LAYERS; SI LAYERS; THREADING DISLOCATION DENSITY (TDD);

SILICON COMPOUNDS;

EID: 34047230601     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/011     Document Type: Article

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