Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

Journal of Crystal Growth

Volumn 257, Issue 1-2, 2003, Pages 19-30

  Hartmann, J M ^a   Abbadie, A ^a   Vinet, M ^a   Clavelier, L ^a   Holliger, P ^a   Lafond, D ^a   Semeria M N ^a   Gentile, P ^a  

^a CEA GRENOBLE   (France)

Author keywords

A1. Fullsheet; A1. Patterned and SOI wafers; A1. Si growth kinetics; A1. Surface preparation; A3. Reduced pressure chemical vapor deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GROWTH KINETICS; HYDROCHLORIC ACID; SILANES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES;

REDUCED PRESSURE-CHEMICAL VAPOR DEPOSITION (RP-CVD);

EPITAXIAL GROWTH;

EID: 0042009849     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01380-0     Document Type: Article

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