SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition

Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 28-37

  Bogumilowicz, Y ^a   Hartmann, J M ^b   Rolland, G ^b   Billon, T ^b  

^a STMICROELECTRONICS   (France)

^b CEA DRT   (France)

Author keywords

A1. Growth models; A3. Chemical vapor deposition processes; B1. Germanium silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESSES; GASEOUS PRECURSORS; GERMANIUM SILICON COMPOUNDS; GROWTH MODELS;

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; HYDROCHLORIC ACID; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SURFACE ROUGHNESS;

GROWTH KINETICS;

EID: 11144283160     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.093     Document Type: Article

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