메뉴 건너뛰기




Volumn 516, Issue 12, 2008, Pages 4238-4246

Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x = 0.2, 0.3, 0.4 and 0.5)

Author keywords

Defects; Reduced Pressure Chemical Vapor Deposition; Stress level; Tensile strain Si on SiGe virtual substrates

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; REFLECTION; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; TENSILE STRESS;

EID: 40849130057     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.162     Document Type: Article
Times cited : (30)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.