-
1
-
-
24644442190
-
-
Bogumilowicz Y., Hartmann J.M., Laugier F., Rolland G., Billon T., Cherkashin N., and Claverie A. J. Cryst. Growth 283 (2005) 346
-
(2005)
J. Cryst. Growth
, vol.283
, pp. 346
-
-
Bogumilowicz, Y.1
Hartmann, J.M.2
Laugier, F.3
Rolland, G.4
Billon, T.5
Cherkashin, N.6
Claverie, A.7
-
2
-
-
0035519123
-
-
Currie M.T., Leitz C.W., Langdo T.A., Taraschi G., Fitzgerald E.A., and Antoniadis D.A. J. Vac. Sci. Technol., B 19 (2001) 2268
-
(2001)
J. Vac. Sci. Technol., B
, vol.19
, pp. 2268
-
-
Currie, M.T.1
Leitz, C.W.2
Langdo, T.A.3
Taraschi, G.4
Fitzgerald, E.A.5
Antoniadis, D.A.6
-
3
-
-
18644382452
-
-
Leitz C.W., Currie M.T., Lee M.L., Cheng Z.-Y., Antoniadis D.A., and Fitzgerald E.A. J. Appl. Phys. 92 (2002) 3745
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 3745
-
-
Leitz, C.W.1
Currie, M.T.2
Lee, M.L.3
Cheng, Z.-Y.4
Antoniadis, D.A.5
Fitzgerald, E.A.6
-
4
-
-
2342613584
-
-
Ghyselen B., Hartmann J.M., Ernst T., Aulnette C., Osternaud B., Bogumilowicz Y., Abbadie A., Besson P., Rayssac O., Tiberj A., Daval N., Cayrefourq I., Fournel F., Moriceau H., Di Nardo C., Andrieu F., Paillard V., Cabié M., Vincent L., Snoeck E., Cristiano F., Rocher A., Ponchet A., Claverie A., Boucaud P., Semeria M.-N., Bensahel D., Kernevez N., and Mazuré C. Solid State Electron. 48 (2005) 1285
-
(2005)
Solid State Electron.
, vol.48
, pp. 1285
-
-
Ghyselen, B.1
Hartmann, J.M.2
Ernst, T.3
Aulnette, C.4
Osternaud, B.5
Bogumilowicz, Y.6
Abbadie, A.7
Besson, P.8
Rayssac, O.9
Tiberj, A.10
Daval, N.11
Cayrefourq, I.12
Fournel, F.13
Moriceau, H.14
Di Nardo, C.15
Andrieu, F.16
Paillard, V.17
Cabié, M.18
Vincent, L.19
Snoeck, E.20
Cristiano, F.21
Rocher, A.22
Ponchet, A.23
Claverie, A.24
Boucaud, P.25
Semeria, M.-N.26
Bensahel, D.27
Kernevez, N.28
Mazuré, C.29
more..
-
5
-
-
0842309839
-
-
Rim K., Chan K., Shi L., Ott J., Klymko N., Cardone F., Tai L., Koester S., Cobb M., Canaperi D., To B., Duch E., Babich I., Carruthers R., Saunders P., Walker G., Zhang Y., Steen M., and Ieong M. Proceedings of the 2003 International Electron Devices Meeting, Washington, U.S.A. (2003) 49
-
(2003)
Proceedings of the 2003 International Electron Devices Meeting, Washington, U.S.A.
, pp. 49
-
-
Rim, K.1
Chan, K.2
Shi, L.3
Ott, J.4
Klymko, N.5
Cardone, F.6
Tai, L.7
Koester, S.8
Cobb, M.9
Canaperi, D.10
To, B.11
Duch, E.12
Babich, I.13
Carruthers, R.14
Saunders, P.15
Walker, G.16
Zhang, Y.17
Steen, M.18
Ieong, M.19
-
6
-
-
34547257458
-
-
Andrieu F., Dupré C., Rochette F., Faynot O., Tosti L., Buj C., Rouchouze E., Cassé M., Ghyselen B., Cayrefourcq I., Brévard L., Allain F., Barbé J.C., Cluzel J., Vandooren A., Denorme S., Ernst T., Fenouillet-Béranger C., Jahan C., Lafond D., Dansas H., Previtali B., Colonna J.P., Grampeix H., Gaud P., Mazuré C., and Deleonibus S. 2006 Symposium on VLSI Technology, Honolulu, U.S.A. (2006-2006) 168
-
(2006)
2006 Symposium on VLSI Technology, Honolulu, U.S.A.
, pp. 168
-
-
Andrieu, F.1
Dupré, C.2
Rochette, F.3
Faynot, O.4
Tosti, L.5
Buj, C.6
Rouchouze, E.7
Cassé, M.8
Ghyselen, B.9
Cayrefourcq, I.10
Brévard, L.11
Allain, F.12
Barbé, J.C.13
Cluzel, J.14
Vandooren, A.15
Denorme, S.16
Ernst, T.17
Fenouillet-Béranger, C.18
Jahan, C.19
Lafond, D.20
Dansas, H.21
Previtali, B.22
Colonna, J.P.23
Grampeix, H.24
Gaud, P.25
Mazuré, C.26
Deleonibus, S.27
more..
-
7
-
-
22644452458
-
-
Samavedam S., Taylor W.J., Grant J.M., Smith J.A., Tobin P.J., Dip A., Phillips A.M., and Liu R. J. Vac. Sci. Technol., B 17 (1999) 1424
-
(1999)
J. Vac. Sci. Technol., B
, vol.17
, pp. 1424
-
-
Samavedam, S.1
Taylor, W.J.2
Grant, J.M.3
Smith, J.A.4
Tobin, P.J.5
Dip, A.6
Phillips, A.M.7
Liu, R.8
-
8
-
-
34547838661
-
-
Parsons J., Parker E.H.C., Leadley D.R., Grsaby T.J., and Capewell A.D. Appl. Phys. Lett. 91 (2007) 063127
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 063127
-
-
Parsons, J.1
Parker, E.H.C.2
Leadley, D.R.3
Grsaby, T.J.4
Capewell, A.D.5
-
11
-
-
33745161403
-
-
Abbadie A., Hartmann J.M., Di Nardo C., Billon T., Campidelli Y., and Besson P. Microelectron. Eng. 83 (2006) 1986
-
(2006)
Microelectron. Eng.
, vol.83
, pp. 1986
-
-
Abbadie, A.1
Hartmann, J.M.2
Di Nardo, C.3
Billon, T.4
Campidelli, Y.5
Besson, P.6
-
12
-
-
13644283810
-
-
Bogumilowicz Y., Hartmann J.M., Truche R., Campidelli Y., Rolland G., and Billon T. Semicond. Sci. Technol. 20 (2005) 127
-
(2005)
Semicond. Sci. Technol.
, vol.20
, pp. 127
-
-
Bogumilowicz, Y.1
Hartmann, J.M.2
Truche, R.3
Campidelli, Y.4
Rolland, G.5
Billon, T.6
-
13
-
-
33846968502
-
-
Hartmann J.M., Baud L., Rolland G., Fabbri J.M., and Billon T. ECS Trans. 3 7 (2006) 219
-
(2006)
ECS Trans.
, vol.3
, Issue.7
, pp. 219
-
-
Hartmann, J.M.1
Baud, L.2
Rolland, G.3
Fabbri, J.M.4
Billon, T.5
-
14
-
-
20144387589
-
-
2004-07
-
Westhoff R., Carlin J., Erdtmann M., Langdo T.A., Leitz C., Yang V., Petrocelli K., Bulsara M.T., Fitzgerald E.A., and Vineis C.J. Electrochem. Soc. Proc. (2004) 589 2004-07
-
(2004)
Electrochem. Soc. Proc.
, pp. 589
-
-
Westhoff, R.1
Carlin, J.2
Erdtmann, M.3
Langdo, T.A.4
Leitz, C.5
Yang, V.6
Petrocelli, K.7
Bulsara, M.T.8
Fitzgerald, E.A.9
Vineis, C.J.10
-
15
-
-
33745470219
-
-
Leitz C., Vineis C.J., Carlin J., Fiorenza J., Braithwaite G., Westhoff R., Yang V., Carroll M., Langdo T.A., Matthews K., Kohli P., Rodder M., Wise R., and Lochtefeld A. Thin Solid Films 513 (2006) 300
-
(2006)
Thin Solid Films
, vol.513
, pp. 300
-
-
Leitz, C.1
Vineis, C.J.2
Carlin, J.3
Fiorenza, J.4
Braithwaite, G.5
Westhoff, R.6
Yang, V.7
Carroll, M.8
Langdo, T.A.9
Matthews, K.10
Kohli, P.11
Rodder, M.12
Wise, R.13
Lochtefeld, A.14
-
16
-
-
1342308337
-
-
Abbadie A., Hartmann J.M., Holliger P., Séméria M.N., Besson P., and Gentile P. Appl. Surf. Sci. 225 (2004) 256
-
(2004)
Appl. Surf. Sci.
, vol.225
, pp. 256
-
-
Abbadie, A.1
Hartmann, J.M.2
Holliger, P.3
Séméria, M.N.4
Besson, P.5
Gentile, P.6
-
18
-
-
34047213228
-
-
Loo R., Sorada H., Inoue A., Lee B.C., Hyun S., Jakschik S., Lujan G., Hoffmann T.Y., and Caymax M. Semicond. Sci. Technol. 22 (2007) S110
-
(2007)
Semicond. Sci. Technol.
, vol.22
-
-
Loo, R.1
Sorada, H.2
Inoue, A.3
Lee, B.C.4
Hyun, S.5
Jakschik, S.6
Lujan, G.7
Hoffmann, T.Y.8
Caymax, M.9
-
20
-
-
13244267300
-
-
Leitz C., Yang V., Carroll M., Langdo T., Westhoff R., Vineis C., and Bulsara M.T. Mater. Sci. Semicond. Proc. 8 (2005) 187
-
(2005)
Mater. Sci. Semicond. Proc.
, vol.8
, pp. 187
-
-
Leitz, C.1
Yang, V.2
Carroll, M.3
Langdo, T.4
Westhoff, R.5
Vineis, C.6
Bulsara, M.T.7
-
26
-
-
7544246636
-
-
Bedell S.W., Fogel K., Sadana D.K., Chen H., and Domenicucci A. Appl. Phys. Lett. 85 (2004) 2493
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 2493
-
-
Bedell, S.W.1
Fogel, K.2
Sadana, D.K.3
Chen, H.4
Domenicucci, A.5
-
28
-
-
31144461711
-
-
Kimura Y., Sugii N., Kimura S., Inui K., and Hirasawa W. Appl. Phys. Lett. 88 (2006) 031912
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 031912
-
-
Kimura, Y.1
Sugii, N.2
Kimura, S.3
Inui, K.4
Hirasawa, W.5
-
30
-
-
0347758355
-
-
Fiorenza J.G., Braithwaite G., Leitz C.W., Currie M.T., Yap J., Singaporewala F., Yang V.K., Langdo T.A., Carlin J., Somerville M., Lochtefeld A., Badawi H., and Bulsara M.T. Semicond. Sci. Technol. 19 (2004) L4
-
(2004)
Semicond. Sci. Technol.
, vol.19
-
-
Fiorenza, J.G.1
Braithwaite, G.2
Leitz, C.W.3
Currie, M.T.4
Yap, J.5
Singaporewala, F.6
Yang, V.K.7
Langdo, T.A.8
Carlin, J.9
Somerville, M.10
Lochtefeld, A.11
Badawi, H.12
Bulsara, M.T.13
-
31
-
-
0003644756
-
-
Kasper E., and Lyutovich K. (Eds)
-
Hull R. In: Kasper E., and Lyutovich K. (Eds). Properties of Silicon Germanium and SiGe:Carbon, INSPEC, The Institution of Electrical Engineers, London, United Kingdom (2000) 9-20
-
(2000)
Properties of Silicon Germanium and SiGe:Carbon, INSPEC, The Institution of Electrical Engineers, London, United Kingdom
, pp. 9-20
-
-
Hull, R.1
-
34
-
-
33745131446
-
-
Sugii N., Kondo M., Miyamoto M., Hoshino Y., Hatori M., Hirasawa W., Kimura Y., Kimura S., Kondo Y., and Oshida I. 2005 Symposium on VLSI Technology, Kyoto, Japan (2005) 54
-
(2005)
2005 Symposium on VLSI Technology, Kyoto, Japan
, pp. 54
-
-
Sugii, N.1
Kondo, M.2
Miyamoto, M.3
Hoshino, Y.4
Hatori, M.5
Hirasawa, W.6
Kimura, Y.7
Kimura, S.8
Kondo, Y.9
Oshida, I.10
-
35
-
-
33745148648
-
-
Thean A.V.Y., White T., Sadaka M., McCormick L., Ramon M., Mora R., Beckage P., Canonico M., Wang X.-D., Zollner S., Murphy S., Van der Pas V., Zavala M., Noble R., Zia O., Kang L.-G., Kolagunta V., Cave N., Cheek J., Mendicino M., Nguyen B.-Y., Orlowski M., Venkatesan S., Mogab J., Chang C.H., Chiu Y.H., Tuan H.C., Lee Y.C., Liang M.S., Sun Y.C., Cayrefourcq I., Metral F., Kennard M., and Mazuré C. 2005 Symposium on VLSI Technology, Kyoto, Japan (2005) 134
-
(2005)
2005 Symposium on VLSI Technology, Kyoto, Japan
, pp. 134
-
-
Thean, A.V.Y.1
White, T.2
Sadaka, M.3
McCormick, L.4
Ramon, M.5
Mora, R.6
Beckage, P.7
Canonico, M.8
Wang, X.-D.9
Zollner, S.10
Murphy, S.11
Van der Pas, V.12
Zavala, M.13
Noble, R.14
Zia, O.15
Kang, L.-G.16
Kolagunta, V.17
Cave, N.18
Cheek, J.19
Mendicino, M.20
Nguyen, B.-Y.21
Orlowski, M.22
Venkatesan, S.23
Mogab, J.24
Chang, C.H.25
Chiu, Y.H.26
Tuan, H.C.27
Lee, Y.C.28
Liang, M.S.29
Sun, Y.C.30
Cayrefourcq, I.31
Metral, F.32
Kennard, M.33
Mazuré, C.34
more..
-
36
-
-
34547339375
-
-
Thean A.V.-Y., Prabhu L., Vartnanian V., Ramon M., Nguyen B.-Y., White T., Collard H., Xie Q.-H., Murphy S., Cheek J., Venkatesan S., Chang C.H., Chiu Y.H., Tuan H.C., See Y.C., Liang M.S., and Sun Y.C. Proceedings of the 2005 International Electron Devices Meeting, Washington, U.S.A. (2005) 515
-
(2005)
Proceedings of the 2005 International Electron Devices Meeting, Washington, U.S.A.
, pp. 515
-
-
Thean, A.V.-Y.1
Prabhu, L.2
Vartnanian, V.3
Ramon, M.4
Nguyen, B.-Y.5
White, T.6
Collard, H.7
Xie, Q.-H.8
Murphy, S.9
Cheek, J.10
Venkatesan, S.11
Chang, C.H.12
Chiu, Y.H.13
Tuan, H.C.14
See, Y.C.15
Liang, M.S.16
Sun, Y.C.17
-
37
-
-
34047211456
-
-
Thean A.V.-Y., Zhang D., Vartanian V., Adams V., Conner J., Canonico M., Desjardin H., Grudowski P., Gu B., Shi Z.-H., Murphy S., Spencer G., Filipiak S., Goedeke D., Wang X.-D., Goolsby B., Dhanpani V., Prabhu L., Backer S., La L.-B., Burnett D., White T., Nguyen B.-Y., White B.E., Venkatesan S., Mogab J., Cayrefourcq I., and Mazuré C. 2006 Symposium on VLSI Technology, Honolulu, U.S.A. (2006) 164
-
(2006)
2006 Symposium on VLSI Technology, Honolulu, U.S.A.
, pp. 164
-
-
Thean, A.V.-Y.1
Zhang, D.2
Vartanian, V.3
Adams, V.4
Conner, J.5
Canonico, M.6
Desjardin, H.7
Grudowski, P.8
Gu, B.9
Shi, Z.-H.10
Murphy, S.11
Spencer, G.12
Filipiak, S.13
Goedeke, D.14
Wang, X.-D.15
Goolsby, B.16
Dhanpani, V.17
Prabhu, L.18
Backer, S.19
La, L.-B.20
Burnett, D.21
White, T.22
Nguyen, B.-Y.23
White, B.E.24
Venkatesan, S.25
Mogab, J.26
Cayrefourcq, I.27
Mazuré, C.28
more..
-
38
-
-
34047234899
-
-
Collaert N., Rooyackers R., Clemente F., Zimmerman P., Cayrefourcq I., Ghyselen B., San K.T., Jurczak M., and Biesemans S. 2006 Symposium on VLSI Technology, Honolulu, U.S.A. (2006) 64
-
(2006)
2006 Symposium on VLSI Technology, Honolulu, U.S.A.
, pp. 64
-
-
Collaert, N.1
Rooyackers, R.2
Clemente, F.3
Zimmerman, P.4
Cayrefourcq, I.5
Ghyselen, B.6
San, K.T.7
Jurczak, M.8
Biesemans, S.9
-
39
-
-
67649214117
-
-
Yin H., Ren Z., Chen H., Holt J., Liu X., Sleight J.W., Rim K., Chan V., Fried D.M., Kim Y.H., Chu J.O., Greene B.J., Bedell S.W., Pfeiffern G., Bendernagel R., Sadana D.K., Kanarski T., Sung C.Y., Ieong M., and Shahidi G. 2006 Symposium on VLSI Technology, Honolulu, U.S.A. (2006) 94
-
(2006)
2006 Symposium on VLSI Technology, Honolulu, U.S.A.
, pp. 94
-
-
Yin, H.1
Ren, Z.2
Chen, H.3
Holt, J.4
Liu, X.5
Sleight, J.W.6
Rim, K.7
Chan, V.8
Fried, D.M.9
Kim, Y.H.10
Chu, J.O.11
Greene, B.J.12
Bedell, S.W.13
Pfeiffern, G.14
Bendernagel, R.15
Sadana, D.K.16
Kanarski, T.17
Sung, C.Y.18
Ieong, M.19
Shahidi, G.20
more..
|