Growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) surfaces

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 288-295

  Hartmann, J M ^a   Burdin, M ^a   Rolland, G ^a   Billon, T ^a  

^a CEA LETI   (France)

Author keywords

A1. Si and SiGe growth kinetics on Si(1 0 0) Si(1 1 0) and Si(1 1 1); A3. Reduced pressure chemical vapour deposition

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTALLINE MATERIALS; GROWTH RATE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

CLUSTER TOOLS; DICHLOROSILANES; MASS FLOWS; REDUCED PRESSURE CHEMICAL VAPOUR DEPOSITION;

SILICON;

EID: 33947185762     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.06.043     Document Type: Article

References (34)

1. E. Kasper, K. Lyutovich (Eds.), Properties of Silicon Germanium and SiGe:Carbon, EMIS Datareview Series No. 24, INSPEC, The Institution of Electrical Engineers, London, UK, 2000.
2. O. Weber, F. Ducroquet, T. Ernst, F. Andrieu, J.-F. Damlencourt, J.-M. Hartmann, B. Guillaumot, A.-M. Papon, H. Dansas, L. Brévard, A. Toffoli, P. Besson, F. Martin, Y. Morand, S. Deleonibus, In: 2004 Symposium on VLSI Technology Digest of Technical Papers, pp. 42-43.
3. F. Andrieu, T. Ernst, O. Faynot, Y. Bogumilowicz, J.M. Hartmann, J. Eymery, D. Lafond, Y.-M. Le Vaillant, C. Dupré, R. Powers, F. Fournel, C. Fenouillet-Béranger, A. Vandooren, B. Ghyselen, C. Mazuré, N. Kernevez, G. Ghibaudo, S. Deleonibus, In: Proceedings of the IEEE 2005 SOI Conference, Honolulu, USA, October 2005, p. 223.
4. O. Weber, Y. Bogumilowicz, T. Ernst, J.M. Hartmann, F. Ducroquet, F. Andrieu, C. Dupré, L. Clavelier, C. Le Royer, N. Cherkashin, M. Hÿtch, D. Rouchon, H. Dansas, A.-M. Papon, V. Carron, C. Tabone, S. Deleonibus, In: Proceedings of the IEDM 2005 Conference, Washington, USA, December 2005, p. 143.
5. Rouvière M., Vivien L., Le Roux X., Mangeney J., Crozat P., Hoarau C., Cassan E., Pascal D., Laval S., Fédéli J.M., Damlencourt J.F., Hartmann J.M., and Kolev S. Appl. Phys. Lett. 87 (2005) 231109
6. C.D. Sheraw, M. Yang, D.M. Fried, G. Costrini, T. Kanarsky, W.H. Lee, V. Chan, M.V. Fischetti, J. Holt, L. Black, M. Naeem, S. Panda, L. Economikos, J. Groschpopf, A. Kapur, Y. Li, R.T. Mo, A. Bonnoit, D. Degraw, S. Luning, D. Chidamharrao, X. Wang, A. Bryant, D. Brown, C.-Y. Sung, P. Agnallo, M. Ieong, S.-F. Huang, X. Chen, M. Khare, In: Symposium on VLSI Technology Digest of Technical Papers, 2005, pp. 12-13.
7. Q. Ouyang, M. Yang, J. Holt, S. Panda, H. Chen, H. Utomo, M. Fischetti, N. Rodevo, J. Li, N. Klymko, H. Wildman, T. Kanarsky, G. Costrini, D.M. Fried, A. Bryant, J.A. Ott, M. Ieong, C.-Y. Sung, In: Symposium on VLSI Technology Digest of Technical Papers, 2005, pp. 28-29.
8. H. Shang, J. Rubino, B. Doris, A. Topol, J. Sleight, J. Cai, L. Chang, J.A. Ott, J. Kedzierski, K. Chan, L. Shi, K. Babich, J. Newbury, E. Sikorski, B.N. To, K.W. Guarini, M. Ieong, In: Symposium on VLSI Technology Digest of Technical Papers, 2005, pp. 78-79.
9. O. Weber, P. Scheiblein, R. Ritzenthaler, T. Ernst, F. Andrieu, F. Ducroquet, J.-F. Damlencourt, Y. Le Tiec, A.-M. Papon, H. Dansas, L. Brévard, A. Toffoli, B. Guillaumot, S. Deleonibus, In: Symposium on VLSI Technology Digest of Technical Papers, 2005, pp. 156-157.
10. C. Jahan, O. Faynot, M. Cassé, R. Ritzenthaler, L. Brévard, L. Tosti, C. Vizioz, F. Allain, A.M. Papon, H. Dansas, F. Martin, M. Vinet, B. Guillaumot, A. Toffoli, B. Giffard, S. Deleonibus, In: Symposium on VLSI Technology Digest of Technical Papers, 2005, pp. 112-113.
11. A. Dixit, K.G. Anil, R. Rooyackers, F. Leys, M. Kaiser, R. Weemaes, I. Ferain, A. De Keersgieter, N. Collaert, R. Surdeanu, M. Goodwin, P. Zimmerman, R. Loo, M. Caymax, M. Jurczak, S. Biesmans, K. De Meyer, In: Proceedings of the ESSDERC Conference, Grenoble, France, September, 2005, 445p.
12. Fitch J.T. J. Electrochem. Soc. 141 (1994) 1046
13. Kongetira P., Neudeck G., and Takoudis C.G. J. Vac. Sci. Technol. B 15 (1997) 1902
14. Knutson K.L., Carr R.W., Liu W.H., and Campbell S.A. J. Crystal Growth 140 (1994) 191
15. Bogumilowicz Y., Hartmann J.M., Truche R., Campidelli Y., Rolland G., and Billon T. Semicond. Sci. Technol. 20 (2005) 127
16. Kommu S., Wilson G.M., and Khomani B. J. Electrochem. Soc. 147 (2000) 1538
17. Hartmann J.M., Loup V., Rolland G., Holliger P., Vannuffel C., and Séméria M.N. J. Crystal Growth 236 (2002) 10
18. Hartmann J.M., Champay F., Loup V., Rolland G., and Séméria M.N. J. Crystal Growth 241 (2002) 93
19. Hartmann J.M., Abbadie A., Vinet M., Clavelier L., Holliger P., Lafond D., Séméria M.N., and Gentile P. J. Crystal Growth 257 (2003) 19
20. Sinniah K., Sherman M.G., Lewis L.B., Weinberg W.H., Yates Jr. J.T., and Janda K.C. Phys. Rev. Lett. 62 (1989) 567
21. The dangling bonds surface densities do not take into account the surface reconstructions that might be occurring. No one has (to the best of our knowledge) been able to conclusively evidence that Si surfaces are reconstructed in RP-CVD, due to the lack of tools (such as Reflection High Energy Electron Diffraction) that are able to operate at high pressures.
22. Voigtländer B., Weber T., Šmilauer P., and Wolf D.E. Phys. Rev. Lett. 78 (1997) 2164
23. Yamamoto Y., Sueyoshi T., Sato T., and Iwatsuki M. Surf. Sci. 466 (2000) 183
24. Voigtländer B., and Weber T. Phys. Rev. B 54 (1996) 7709
25. Voigtländer B., and Weber T. Phys. Rev. Lett. 77 (1996) 3861
26. Jahan C., Faynot O., Tosti L., and Hartmann J.M. J. Crystal Growth 280 (2005) 530
27. Huang J., Ye Z., Lu H., and Que D. J. Appl. Phys. 83 (1998) 171
28. Holý V., Pietsch U., and Baumbach T. High Resolution X-ray Scattering from Thin Films and Multilayers, Springer Tracts in Modern Physics 149 (1999), Springer, Berlin, Heidelberg, New York
29. Suh K.Y., and Lee H.H. J. Appl. Phys. 88 (2000) 4044
30. Hartmann J.M., Loup V., Rolland G., and Séméria M.N. J. Vac. Sci. Technol. B 21 (2003) 2524
31. 2) mass-flow range than the one probed in Ref. [29], the n (1 0 0) value that can be extracted from the present study is equal to 2.55
32. Hartmann J.M., Clavelier L., Jahan C., Holliger P., Rolland G., Billon T., and Defranoux C. J. Crystal Growth 264 (2004) 36
33. Surnev L., and Tikhov M. Surf. Sci. 138 (1984) 40
34. Eres G., and Sharp J.W. J. Vac. Sci. Technol. A 11 (1993) 2463