Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2493-2502

  Hartmann, J M ^a   Bogumilowciz, Y ^a   Abbadie, A ^a   Fillot, F ^a   Billon, T ^a  

^a CEA LETI   (France)

Author keywords

A1. Defects; A1. Interfaces; A1. Surface structure; A3. Chemical vapour deposition processes; B1. Germanium silicon alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; LIGHT SCATTERING; SUBSTRATES;

SURFACE ROOT MEAN SQUARE; WET CLEANING;

SILICON COMPOUNDS;

EID: 42249091686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.033     Document Type: Article

References (32)

1. Bogumilowicz Y., Hartmann J.M., Laugier F., Rolland G., Billon T., Cherkashin N., and Claverie A. J. Crystal Growth 283 (2005) 346
2. Currie M.T., Leitz C.W., Langdo T.A., Taraschi G., Fitzgerald E.A., and Antoniadis D.A. J. Vac. Sci. Technol. B 19 (2001) 2268
3. Leitz C.W., Currie M.T., Lee M.L., Cheng Z.-Y., Antoniadis D.A., and Fitzgerald E.A. J. Appl. Phys. 92 (2002) 3745
4. Ghyselen B., Hartmann J.M., Ernst T., Aulnette C., Osternaud B., Bogumilowicz Y., Abbadie A., Besson P., Rayssac O., Tiberj A., Daval N., Cayrefourq I., Fournel F., Moriceau H., Di Nardo C., Andrieu F., Paillard V., Cabié M., Vincent L., Snoeck E., Cristiano F., Rocher A., Ponchet A., Claverie A., Boucaud P., Semeria M.-N., Bensahel D., Kernevez N., and Mazure C. Solid State Electron. 48 (2005) 1285
5. K. Rim, K. Chan, L. Shi, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, M. Ieong, in: Proceedings of the 2003 IEDM Conference, Washington, USA, p. 49.
6. F. Andrieu, C. Dupré, F. Rochette, O. Faynot, L. Tosti, C. Buj, E. Rouchouze, M. Cassé, B. Ghyselen, I. Cayrefourcq, L. Brévard, F. Allain, J.C. Barbé, J. Cluzel, A. Vandooren, S. Denorme, T. Ernst, C. Fenouillet-Béranger, C. Jahan, D. Lafond, H. Dansas, B. Previtali, J.P. Colonna, H. Grampeix, P. Gaud, C. Mazuré, S. Deleonibus, in: Symposium on VLSI Technology, Honolulu, USA, 2006, p. 168.
7. Hartmann J.M., Abbadie A., Guinche Y., Holliger P., Rolland G., Buisson M., Defranoux C., Pierrel F., and Billon T. Semicond. Sci. Technol. 22 (2007) 354
8. Hartmann J.M., Abbadie A., Rouchon D., Mermoux M., and Billon T. Semicond. Sci. Technol. 22 (2007) 362
9. Hartmann J.M., Abbadie A., Rouchon D., Barnes J.P., Mermoux M., and Billon T. Thin Solid Films 516 12 (2007) 4238
10. Abbadie A., Hartmann J.M., Holliger P., Séméria M.N., Besson P., and Gentille P. Appl. Surf. Sci. 225 (2004) 256
11. Secco d'Aragona F. J. Electrochem. Soc. 119 (1972) 948
12. Bogumilowicz Y., Hartmann J.M., Rolland G., and Billon T. J. Crystal Growth 274 (2005) 28
13. Abbadie A., Hartmann J.M., Di Nardo C., Billon T., Campidelli Y., and Besson P. Microelec. Eng. 83 (2006) 1986
14. V. Holý, U. Pietsch, T. Baumbach, Springer Tract in Modern Physics, vol. 149, 1999.
15. Hartmann J.M., Eymery J., and Calvo V. Semicond. Sci. Technol. 17 (2002) 198
16. 2)] / sqrt(2 π).
17. O. Bonno, S. Barraud, F. Andrieu, D. Mariolle, F. Rochette, M. Cassé, J.M. Hartmann, F. Bertin, O. Faynot, in: Symposium on VLSI Technology Conference, Kyoto, Japan, 2007, p. 134.
18. Xie Y.H., Gilmer G.H., Roland C., Silverman P.J., Buratto S.K., Cheng J.Y., Fitzgerald E.A., Kortan A.R., Schuppler S., Marcus M.A., and Citrin P.H. Phys. Rev. Lett. 73 (1994) 3006
19. Fischetti M.V., Gámiz F., and Hänsch W. J. Appl. Phys. 92 (2002) 7320
20. Arrazat B., Danel A., Nolot E., Favier S., Carron V., Nemouchi F., Hartmann J.M., Rolland G., Vandelle P., Kermarrec O., Campidelli Y., and Descombes S. Microelectron. Eng. 84 (2007) 2558
21. A. Steinbach, et al., KLA Tencor SP2 User Manual.
22. Zalm P.C. Rep. Prog. Phys. 58 (1995) 1321
23. Holliger P., Laugier F., and Dupuy J.C. Surf. Interf. Anal. 34 (2002) 472
24. Bedell S.W., Fogel K., Sadana D.K., Chen H., and Domenicucci A. Appl. Phys. Lett. 85 (2004) 2493
25. Hirashita N., Sugiyama N., Toyoda E., and Tagaki S. Appl. Phys. Lett. 86 (2005) 221923
26. Kimura Y., Sugii N., Kimura S., Inui K., and Hirasawa W. Appl. Phys. Lett. 88 (2006) 031912
27. Kvam E.P., and Hull R. J. Appl. Phys. 73 (1993) 7407
28. Yang J., Neudeck G.W., and Denton J.P. Appl. Phys. Lett. 77 (2000) 4034
29. Fiorenza J.G., Braithwaite G., Leitz C.W., Currie M.T., Yap J., Singaporewala F., Yang V.K., Langdo T.A., Carlin J., Somerville M., Lochtefeld A., Badawi H., and Bulsara M.T. Semicond. Sci. Technol. 19 (2004) L4
30. Leitz C., Yang V., Caroll M., Langdo T., Westhoff R., Vineis C., and Bulsara M. Mater. Sci. Semicond. Proc. 8 (2005) 187
31. Leitz C., Vineis C.J., Carlin J., Fiorenza J., Braithwaite G., Westhoff R., Yang V., Carroll M., Langdo T.A., Matthews K., Kohli P., Rodder M., Wise R., and Lochtefeld A. Thin Solid Films 513 (2006) 300
32. C. Figuet, M. Kennard, US Patent 2007/0051975 A1.