Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors

Journal of Crystal Growth

Volumn 259, Issue 4, 2003, Pages 419-427

  Hartmann, J M ^a   Bertin, F ^a   Rolland, G ^a   Laugier, F ^a   Semeria M N ^a  

^a CEA GRENOBLE   (France)

Author keywords

A1. Chlorinated chemistry; A1. SiGe growth kinetics; A1. Thermal stability; A2. Selective epitaxial growth; A3. Reduced pressure chemical vapor deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GROWTH KINETICS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SILICON WAFERS; TRANSISTORS;

CHANEL ENGINEERING;

EPITAXIAL GROWTH;

EID: 0142186194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.024     Document Type: Article

References (40)

1. Hull R., Bean J.C. Germanium silicon. physics and materials Willadson R.K., Weber E.R. Series Semiconductors and Semimetals. Vol. 56:1999;Academic Press, San-Diego.
2. Schäffler F. Semicond. Sci. Technol. 12:1997;1515.
3. Whall T.E., Parker E.H.C. Thin Sol. Films. 368:2000;297.
4. Colace L., Masini G., Assanto G. IEEE J. Quantum Electron. 35:1999;1843.
5. Raajmakers I.J., Sprey H., Storm A., Bergman T., Italiano J., Meyer D. J. Vac. Sci. Technol. B. 17:1999;2311.
6. Hartmann J.M., Loup V., Rolland G., Holliger P., Laugier F., Vannuffel C., Séméria M.N. J. Crystal Growth. 236:2002;10.
7. Hartmann J.M., Champay F., Loup V., Rolland G., Séméria M.N. J. Crystal Growth. 241:2002;93.
8. J.M. Hartmann, V. Loup, G. Rolland, M.N. Séméria, Vac. Sci. Technol. B, Nov./Dec. 2003, to appear.
9. Regolini J.L., Bensahel D., Mercier J. Mater. Sci. Eng. B. 4:1989;407.
10. Goulding M.R. Mater. Sci. Eng. B. 17:1993;47.
11. Fitch J.T. J. Electrochem. Soc. 141:1994;1046.
12. Vescan L. Mater. Sci. Eng. B. 28:1994;1.
13. Zhong Y., Öztürk M.C., Grider D.T., Wortman J.J., Littlejohn M.A. Appl. Phys. Lett. 57:1990;2092.
14. Agnello P.D., Sedgwick T.O., Goorsky M.S., Ott J., Kuan T.S., Scilla G. Appl. Phys. Lett. 59:1991;1479.
15. Kamins T.I., Wook D.W., Yu P.K., Turner J.E. Appl. Phys. Lett. 61:1992;669.
16. Kamins T.I. J. Appl. Phys. 74:1993;5799.
17. Itoh S., Nakamura T., Nishikawa S. J. Appl. Phys. 78:1995;2716.
18. Bodnar S., De Berranger E., Bouillon P., Mouis M., Skotnicki T., Regolini J.L. J. Vac. Sci. Technol. B. 15:1997;712.
19. Menon C., Bentzen A., Radamson H.H. J. Appl. Phys. 90:2001;4805.
20. Ribot P., Monfray S., Skotnicki T., Dutartre D. Mater. Sci. Eng. B. 89:2002;125.
21. Giannakopoulos K.P., Roth S., Burghammer M., Fellous C., Richard D., Dutartre D. J. Appl. Phys. 93:2003;259.
22. Wang W.-C., Denton J.P., Neudeck G.W., Lee I.M., Takoudis C.G., Koh M.T.K., Kvam E.P. J. Vac. Sci. Technol. B. 15:1997;138.
23. Vescan L. Thin Sol. Films. 294:1997;284 Vescan L., Grimm K., Dieker C. J. Vac. Sci. Technol. B. 16:1998;1549.
24. Vescan L. Thin Sol. Films. 294:1997;284 Vescan L., Grimm K., Dieker C. J. Vac. Sci. Technol. B. 16:1998;1549.
25. De Boer W.B., Tepstra D., Van Berkum J.G.M. Mater. Sci. Technol. B. 67:1999;46.
26. Jerier P., Dutartre D. J. Electrochem. Soc. 146:1999;331.
27. Menon C., Lindgren A.-C., Persson P.O.Å., Hultman L., Radamson H.H. J. Electrochem. Soc. 150:2003;G253.
28. Holliger P., Laugier F., Dupuy J.C. Surf. Interface Anal. 34:2002;472.
29. Holý V., Pietsch U., Baumbach T. High Resolution X-ray Scattering from Thin Films and Multilayers, Springer Tracts in Modern Physics 149. 1999;Springer, Berlin Heidelberg, New-York.
30. A. Abbadie, J.M. Hartmann, P. Holliger, M.N. Séméria, P. Besson, P. Gentile, Appl. Surf. Sci., July 2003, submitted for publication.
31. Hartmann J.M., Abbadie A., Vinet M., Clavelier L., Holliger P., Lafond D., Séméria M.N., Gentile P. J. Crystal Growth. 257:2003;19.
32. S. Chang, D. Unzicker, T.J. Anderson, in: C.G. Cullen (Ed.), Proceedings of the 10th Internationnal conference on CVD, Proc. Vol. 87-8, The Electrochemical Society, Pennington, NJ, 1987, p. 122.
33. Knutson K.L., Carr R.W., Liu W.H., Campbell S.A. J. Crystal Growth. 140:1994;191.
34. Norris D.J., Cullis A.G., Grasby T.J., Parker E.H.C. J. Appl. Phys. 86:1999;7183 Knight A.P., Gwilliam R.M., Sealy B.J., Grasby T.J., Parry C.P., Fulgoni D.J.F., Phillips P.J., Whall T.E., Parker E.H.C., Coleman P.G. J. Appl. Phys. 89:2001;76.
35. Norris D.J., Cullis A.G., Grasby T.J., Parker E.H.C. J. Appl. Phys. 86:1999;7183 Knight A.P., Gwilliam R.M., Sealy B.J., Grasby T.J., Parry C.P., Fulgoni D.J.F., Phillips P.J., Whall T.E., Parker E.H.C., Coleman P.G. J. Appl. Phys. 89:2001;76.
36. Lander R.J.P., Ponomarev Y.V., Van Berkum J.G.M., de Boer W.B., Loo R., Caymax M. J. Appl. Phys. 88:2000;2016.
37. Sardela M.R. Jr., Hansson G.V. J. Vac. Sci. Technol. A. 13:1995;314.
38. Griglione M., Anderson T.J., Haddara Y.M., Law M.E., Jones K.S., Van den Bogaard A. J. Appl. Phys. 88:2000;1366.
39. Pidduck A.J., Robbins D.J., Cullis A.G., Leong W.Y., Pitt A.M. Thin Sol. Films. 222:1992;78.
40. Dutartre D., Warren P., Chollet F., Gisbert F., Bérenguer M., Berbèzier I. J. Crystal Growth. 142:1994;78.