Review of some critical aspects of Ge and GeOI substrates

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 789-805

  Clavelier, L ^a   Deguet, C ^a   Le Royer, C ^a   Vincent, B ^a   Damlencourt, J F ^a   Hartmann, J M ^a   Kermarrec, O ^b   Signamarcheix, T ^c   Depuydt, B ^d   Theuwis, A ^d   Quaeyhaegens, C ^d   Cherkashin, N ^c   Morand, Y ^b   Rivallin, P ^a   Tabone, C ^a   Lagrasta, S ^b   Campidelli, Y ^b   Descombes, S ^b   Sanchez, L ^a   Akastu, T ^c   Rigny, A ^c   Bensahel, D ^b   Billon, T ^a   Kernevez, N ^a   Deleonibus, S ^a   more..

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

^d UMICORE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; LATTICE CONSTANTS; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS; TRANSPORT PROPERTIES;

GE ON INSULATOR (GEOI); GEOI SUBSTRATES; POWER DISSIPATION; SATURATION CURRENTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33846970217     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355874     Document Type: Conference Paper

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