Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 36-47

  Hartmann, J M ^a   Clavelier, L ^a   Jahan, C ^a   Holliger, P ^a   Rolland, G ^a   Billon, T ^a   Defranoux, C ^b  

^a CEA GRENOBLE   (France)

^b SOPRA   (France)

Author keywords

A3. Chemical vapor deposition processes; B1. Silicon germanium alloys; B3. Field effect transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DESORPTION; DIFFRACTOMETERS; DOPING (ADDITIVES); ELLIPSOMETRY; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; LIGHT POLARIZATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

SILICON GERMANIUM ALLOYS; SPECTROSCOPIC ELLIPSOMETRY (SE) SPECTRA;

SILICON ALLOYS;

EID: 1342303911     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.055     Document Type: Article

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