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Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 113-117

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

(6) Bogumilowicz, Y a Hartmann, J M b Cherkashin, N c Claverie, A c Rolland, G b Billon, T b

a STMICROELECTRONICS (France)

b CEA GRENOBLE (France)

c CEMES CNRS (France)

Author keywords

Cross hatch; Dual channel; Heterostructures; Reduced pressure chemical vapor deposition; SiGe; Threading dislocations; Virtual substrates

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; SUBSTRATES;

DISLOCATIONS DENSITY; SIGE;

SILICON COMPOUNDS;

EID: 27844604058 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.052 Document Type: Conference Paper

Times cited : (21)

References (26)

1
- 85166147449
- http://public.itrs.net/

2
- 0342853202
- F. Schäffler Semicond. Sci. Technol. 12 1997 1515
- (1997) Semicond. Sci. Technol. , vol.12 , pp. 1515
- Schäffler, F.¹

3
- 12144288482
- J.M. Hartmann, Y. Bogumilowicz, P. Holliger, F. Laugier, R. Truche, G. Rolland, M.N. Séméria, V. Renard, E.B. Olshanetsky, O. Estibals, Z.D. Kvon, J.C. Portal, L. Vincent, F. Cristiano, and A. Claverie Semicond. Sci. Technol. 19 2004 311
- (2004) Semicond. Sci. Technol. , vol.19 , pp. 311
- Hartmann, J.M.¹ Bogumilowicz, Y.² Holliger, P.³ Laugier, F.⁴ Truche, R.⁵ Rolland, G.⁶ Séméria, M.N.⁷ Renard, V.⁸ Olshanetsky, E.B.⁹ Estibals, O.¹⁰ Kvon, Z.D.¹¹ Portal, J.C.¹² Vincent, L.¹³ Cristiano, F.¹⁴ Claverie, A.¹⁵

4
- 27944445976
- Honolulu (USA)
- K. Mistry, M. Amstrong, C. Auth, S. Cea, T. Coan, T. Ghani, T. Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Sawadzki, K. Zhang, S. Thomson, and M. Bohr Proceedings of the 2004 VLSI Conference Honolulu (USA) 2004 50 51
- (2004) Proceedings of the 2004 VLSI Conference , pp. 50-51
- Mistry, K.¹ Amstrong, M.² Auth, C.³ Cea, S.⁴ Coan, T.⁵ Ghani, T.⁶ Hoffmann, T.⁷ Murthy, A.⁸ Sandford, J.⁹ Shaheed, R.¹⁰ Sawadzki, K.¹¹ Zhang, K.¹² Thomson, S.¹³ Bohr, M.¹⁴

5
- 2342613584
- B. Ghyselen, J.M. Hartmann, T. Ernst, C. Aulnette, B. Osternaud, Y. Bogumilowicz, A. Abbadie, P. Besson, O. Rayssac, A. Tiberj, N. Daval, I. Cayrefourq, F. Fournel, H. Moriceau, C. Di Nardo, F. Andrieu, V. Paillard, M. Cabié, L. Vincent, E. Snoeck, F. Cristiano, A. Rocher, A. Ponchet, A. Claverie, P. Boucaud, M.-N. Semeria, D. Bensahel, N. Kernevez, and C. Mazure Solid State Electron. 48 2004 1285
- (2004) Solid State Electron. , vol.48 , pp. 1285
- Ghyselen, B.¹ Hartmann, J.M.² Ernst, T.³ Aulnette, C.⁴ Osternaud, B.⁵ Bogumilowicz, Y.⁶ Abbadie, A.⁷ Besson, P.⁸ Rayssac, O.⁹ Tiberj, A.¹⁰ Daval, N.¹¹ Cayrefourq, I.¹² Fournel, F.¹³ Moriceau, H.¹⁴ Di Nardo, C.¹⁵ Andrieu, F.¹⁶ Paillard, V.¹⁷ Cabié, M.¹⁸ Vincent, L.¹⁹ Snoeck, E.²⁰ more..

6
- 24644479454
- Honolulu (USA)
- I. Åberg, O.O. Olubiyide, C. Ní Chléirigh, I. Lauer, D.A. Antoniadis, J. Li, R. Hull, and J.L. Hoyt Proceedings of the 2004 VLSI Conference Honolulu (USA) 2004 52 53
- (2004) Proceedings of the 2004 VLSI Conference , pp. 52-53
- Åberg, I.¹ Olubiyide, O.O.² Ní Chléirigh, C.³ Lauer, I.⁴ Antoniadis, D.A.⁵ Li, J.⁶ Hull, R.⁷ Hoyt, J.L.⁸

7
- 14844317262
- Washington (USA)
- K. Rim, K. Chan, L. Shi, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong Proceedings of the 2003 IEDM Conference Washington (USA) 2003 49
- (2003) Proceedings of the 2003 IEDM Conference , pp. 49
- Rim, K.¹ Chan, K.² Shi, L.³ Ott, J.⁴ Klymko, N.⁵ Cardone, F.⁶ Tai, L.⁷ Koester, S.⁸ Cobb, M.⁹ Canaperi, D.¹⁰ To, B.¹¹ Duch, E.¹² Babich, I.¹³ Carruthers, R.¹⁴ Saunders, P.¹⁵ Walker, G.¹⁶ Zhang, Y.¹⁷ Steen, M.¹⁸ Ieong, M.¹⁹

8
- 0346150161
- M.L. Lee, and E.A. Fitzgerald Appl. Phys. Lett. 83 2003 4202
- (2003) Appl. Phys. Lett. , vol.83 , pp. 4202
- Lee, M.L.¹ Fitzgerald, E.A.²

9
- 11144283160
- Y. Bogumilowicz, J.M. Hartmann, G. Rolland, and T. Billon J. Cryst. Growth 274 2005 28
- (2005) J. Cryst. Growth , vol.274 , pp. 28
- Bogumilowicz, Y.¹ Hartmann, J.M.² Rolland, G.³ Billon, T.⁴

10
- 1342308337
- A. Abbadie, J.M. Hartmann, P. Holliger, M.N. Séméria, P. Besson, and P. Gentille Appl. Surf. Sci. 225 2004 256
- (2004) Appl. Surf. Sci. , vol.225 , pp. 256
- Abbadie, A.¹ Hartmann, J.M.² Holliger, P.³ Séméria, M.N.⁴ Besson, P.⁵ Gentille, P.⁶

11
- 0000084967
- E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J. Silvennan, J.-M. Kuo, A.R. Kortan, F.A. Thiel, B.E. Weir, and L.C. Feldman J. Vac. Sci. Technol. B 10 1992 1807
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1807
- Fitzgerald, E.A.¹ Xie, Y.-H.² Monroe, D.³ Silvennan, P.J.⁴ Kuo, J.-M.⁵ Kortan, A.R.⁶ Thiel, F.A.⁷ Weir, B.E.⁸ Feldman, L.C.⁹

12
- 0001213669
- A.C. Churchill, D.J. Robbins, D.J. Wallis, N. Griffin, D.J. Paul, A.J. Pidduck, W.Y. Leong, and G.M. Williams J. Vac. Sci. Technol. B 16 1998 1634
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 1634
- Churchill, A.C.¹ Robbins, D.J.² Wallis, D.J.³ Griffin, N.⁴ Paul, D.J.⁵ Pidduck, A.J.⁶ Leong, W.Y.⁷ Williams, G.M.⁸

13
- 33745433129
- R. Westhoff, J. Carlin, M. Erdtmann, T.A. Langdo, C. Leitz, V. Yang, K. Petrocelli, M.T. Bulsara, E.A. Fitzgerald, and C.J. Vineis Electrochem. Soc. Proc. 2004-2007 2004 589
- (2004) Electrochem. Soc. Proc. , vol.2004-2007 , pp. 589
- Westhoff, R.¹ Carlin, J.² Erdtmann, M.³ Langdo, T.A.⁴ Leitz, C.⁵ Yang, V.⁶ Petrocelli, K.⁷ Bulsara, M.T.⁸ Fitzgerald, E.A.⁹ Vineis, C.J.¹⁰

14
- 0344084121
- S.H. Olsen, A.G. O'Neill, S. Chattopadhyay, K.S.K. Kwa, L.S. Driscoll, J. Zhang, D.J. Robbins, and V. Higgs J. Appl. Phys. 94 2003 6855
- (2003) J. Appl. Phys. , vol.94 , pp. 6855
- Olsen, S.H.¹ O'Neill, A.G.² Chattopadhyay, S.³ Kwa, K.S.K.⁴ Driscoll, L.S.⁵ Zhang, J.⁶ Robbins, D.J.⁷ Higgs, V.⁸

15
- 0030214222
- H. Simka, H. Hierlemann, M. Utz, and K.F. Jensen J. Electrochem. Soc. 143 1996 2646
- (1996) J. Electrochem. Soc. , vol.143 , pp. 2646
- Simka, H.¹ Hierlemann, H.² Utz, M.³ Jensen, K.F.⁴

16
- 0037096488
- H. Chen, Y.K. Li, C.S. Peng, H.F. Liu, Y.L. Liu, Q. Huang, J.M. Zhou, and Q.-K. Xue Phys. Rev. B 65 2002 233 303
- (2002) Phys. Rev. B , vol.65 , pp. 233-303
- Chen, H.¹ Li, Y.K.² Peng, C.S.³ Liu, H.F.⁴ Liu, Y.L.⁵ Huang, Q.⁶ Zhou, J.M.⁷ Xue, Q.-K.⁸

17
- 85166120642
- This quantity generally scales with a material's melting temperature
- This quantity generally scales with a material's melting temperature.

18
- 0000059047
- M.T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, and E.A. Fitzgerald Appl. Phys. Lett. 72 1998 1718
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1718
- Currie, M.T.¹ Samavedam, S.B.² Langdo, T.A.³ Leitz, C.W.⁴ Fitzgerald, E.A.⁵

19
- 0032760332
- E.A. Fitzgerald, M.T. Currie, S.B. Samavedam, T.A. Langdo, G. Taraschi, V. Yang, C.W. Leitz, and M.T. Bulsara Phys. Stat. Sol. (a) 171 1999 227
- (1999) Phys. Stat. Sol. (A) , vol.171 , pp. 227
- Fitzgerald, E.A.¹ Currie, M.T.² Samavedam, S.B.³ Langdo, T.A.⁴ Taraschi, G.⁵ Yang, V.⁶ Leitz, C.W.⁷ Bulsara, M.T.⁸

20
- 0347477182
- K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, and N. Nakagawa Appl. Phys. Lett. 83 2003 4339
- (2003) Appl. Phys. Lett. , vol.83 , pp. 4339
- Sawano, K.¹ Koh, S.² Shiraki, Y.³ Hirose, Y.⁴ Hattori, T.⁵ Nakagawa, N.⁶

21
- 0035883774
- C.W. Leitz, M.T. Currie, A.Y. Kim, J. Lai, E. Robbins, and E.A. Fitzgerald J. Appl. Phys. 90 2001 2730
- (2001) J. Appl. Phys. , vol.90 , pp. 2730
- Leitz, C.W.¹ Currie, M.T.² Kim, A.Y.³ Lai, J.⁴ Robbins, E.⁵ Fitzgerald, E.A.⁶

22
- 0031073160
- E.A. Fitzgerald, and S.B. Samavedam Thin Solid films 294 1997 3
- (1997) Thin Solid Films , vol.294 , pp. 3
- Fitzgerald, E.A.¹ Samavedam, S.B.²

23
- 0033284270
- E.A. Fitzgerald, A.Y. Kim, M.T. Currie, T.A. Langdo, G. Taraschi, and M.T. Bulsara Mater. Sci. Eng. B 67 1999 53
- (1999) Mater. Sci. Eng. B , vol.67 , pp. 53
- Fitzgerald, E.A.¹ Kim, A.Y.² Currie, M.T.³ Langdo, T.A.⁴ Taraschi, G.⁵ Bulsara, M.T.⁶

24
- 19944433396
- M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, and A. Lochtefeld J. Appl. Phys. 97 2005 011101
- (2005) J. Appl. Phys. , vol.97 , pp. 011101
- Lee, M.L.¹ Fitzgerald, E.A.² Bulsara, M.T.³ Currie, M.T.⁴ Lochtefeld, A.⁵

25
- 1642385820
- M.L. Lee, A.J. Pitera, and E.A. Fitzgerald J. Vac. Sci. Technol. B 22 2004 158
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 158
- Lee, M.L.¹ Pitera, A.J.² Fitzgerald, E.A.³

26
- 27844466675
- N. Cherkashin, M.J. Hÿtch, E. Snoeck, A. Claverie, J.M. Hartmann, and Y. Bogumilowicz Mater. Sci. Eng. 124-125 2005 118
- (2005) Mater. Sci. Eng. , vol.124-125 , pp. 118
- Cherkashin, N.¹ Hÿtch, M.J.² Snoeck, E.³ Claverie, A.⁴ Hartmann, J.M.⁵ Bogumilowicz, Y.⁶

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