Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 354-361

  Hartmann, J M ^a   Abbadie, A ^b   Guinche, Y ^c   Holliger, P ^a   Rolland, G ^a   Buisson, M ^d   Defranoux, C ^c   Pierrel, F ^d   Billon, T ^a  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c SOPRA   (France)

^d Taylor and Hobson Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM THICKNESS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; SUBSTRATES; TENSILE STRAIN;

CROSS HATCH; GASEOUS PRECURSOR CHEMISTRIES; INSTRUMENTAL BROADENING; X RAY REFLECTIVITY;

SILICON COMPOUNDS;

EID: 34047223251     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/010     Document Type: Article

References (32)

1. Paul D J 2004 Semicond. Sci. Technol. 19 R75
2. Bogumilowicz Y, Hartmann J M, Laugier F, Rolland G, Billon T, Cherkashin N and Claverie A 2005 J. Cryst. Growth 283 346
3. Bogumilowicz Y, Hartmann J M, Laugier F, Rolland G and Billon T 2005 Sol. State Phenom. 108-109 445
4. Currie M T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A and Antoniadis D A 2001 J. Vac. Sci. Technol. B 19 2268
5. Leitz C W, Currie M T, Lee M L, Cheng Z-Y, Antoniadis D A and Fitzgerald E A 2002 J. Appl. Phys. 92 3745
6. Bogumilowicz Y, Hartmann J M, Cherkashin N, Claverie A, Rolland G and Billon T 2005 Mater. Sci. Eng. B 124-125 113
7. Cherkashin N, Htch M J, Snoeck E, Claverie A, Hartmann J M and Bogumilowicz Y 2005 Mater. Sci. Eng. B 124-125 118
8. Weber O et al 2005 Proc. IEDM 2005 Conference (Washington, DC, December 2005) p 143
9. Ghyselen B et al 2005 Solid-State Electron. 48 1285
10. berg I, Olubiyide O O, NíChléirigh C, Lauer I, Antoniadis D A, Li J, Hull R and Hoyt J L 2004 Proc. 2004 VLSI Conference (Honolulu, HI) pp 52-3
11. Rim K et al 2003 Proc. 2003 IEDM Conference (Washington, DC) p 49
12. Andrieu F et al 2006 2006 Symp. on VLSI Technology (Honolulu, HI) p 168
13. Samavedam S, Taylor W J, Grant J M, Smith J A, Tobin P J, Dip A, Phillips A M and Liu R 1999 J. Vac. Sci. Technol. B 17 1424
14. Fiorenza J G et al 2004 Semicond. Sci. Technol. 19 L4
15. Bedell S W, Fogel K, Sadana D K, Chen H and Domenicucci A 2004 Appl. Phys. Lett. 85 2493
16. Leitz C et al 2006 Thin Sol. Films 513 300
17. Schimmel D G 1979 J. Electrochem. Soc. 126 479
18. Bogumilowicz Y, Hartmann J M, Rolland G and Billon T 2005 J. Cryst. Growth 274 28
19. Abbadie A, Hartmann J M, Di Nardo C, Billon T, Campidelli Y and Besson P 2006 Microelectron. Eng. 83 1986
20. Bogumilowicz Y, Hartmann J M, Truche R, Campidelli Y, Rolland G and Billon T 2005 Semicond. Sci. Technol. 20 127
21. Abbadie A, Hartmann J M, Holliger P, Séméria M N, Besson P and Gentille P 2004 Appl. Surf. Sci. 225 256
22. Hol V, Pietsch U and Baumbach T 1999 High Resolution X-Ray Scattering from Thin Films and Multilayers (Springer Tracts in Modern Physics vol 149)
23. Van der Lee A 2000 Solid State Sci. 2 257
24. Tompkins H G 1993 A User's Guide to Ellipsometry (New York: Academic)
25. Bauer G and Richter W 1996 Optical Characterization of Epitaxial Semiconductor Layers (Berlin: Springer)
26. Pickering C, Carline R T, Robbins D J, Leong W Y, Barnett S J, Pitt A D and Cullis A G 1993 J. Appl. Phys. 73 239
27. Vineis C J 2005 Phys. Rev. B 71 245205
28. Loo R, Sorada H, Inoue A, Lee B C, Hyun S, Jakschik S, Lujan G, Hoffmann T Y and Caymax M 2007 Semicond. Sci. Technol. 22 S110
29. Olsen S H, O'Neil A G, Norris D J, Cullis A G, Woods N J, Zhang J, Fobelets K and Kemhadjian H A 2002 Semicond. Sci. Technol. 17 655
30. Akatsu T et al 2006 ECS Trans. 3 (6) 107
31. Leitz C, Yang V, Carroll M, Langdo T, Westhoff R, Vineis C and Bulsara M T 2005 Mater. Sci. Semicond. Proc. 8 187
32. Hartmann J M, Abbadie A, Rouchon D, Mermoux M and Billon T 2007 Semicond. Sci. Technol. 22 362 (Part II, following paper)